公开(公告)号：US20150123180A1

公开(公告)日：2015-05-07

申请号：US14556093

申请日：2014-11-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro SATO ,  Ryohei MIYAGAWA ,  Tokuhiko TAMAKI ,  Junji HIRASE ,  Yoshiyuki OHMORI ,  Yoshiyuki MATSUNAGA

IPC: H01L27/146 ,  H01L21/266 ,  H01L21/8234

CPC classification number: H01L27/14643 ,  H01L21/266 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14665 ,  H01L27/14689 ,  H04N5/363 ,  H04N5/378

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

Abstract translation: 每个单位像素包括光电转换器，与半导体区域一起形成累积二极管的n型杂质区域，累积二极管累积由光电转换器产生的信号电荷;放大器晶体管，包括电连接到杂质区的栅电极 以及形成在放大晶体管周围并注入p型杂质的隔离区域。 放大器晶体管包括形成在栅极电极和隔离区域之间的n型源极/漏极区域和形成在栅电极下方的沟道区域。 在包括沟道区域的部分中，隔离区域中的间隙在栅极宽度方向上比在包括源极/漏极区域的部分处更宽。

公开(公告)号：US20150084106A1

公开(公告)日：2015-03-26

申请号：US14555153

申请日：2014-11-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI ,  Junji HIRASE ,  Kosaku SAEKI ,  Yoshinori TAKAMI ,  Takeshi HIDAKA ,  Tokuhiko TAMAKI

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14689

Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.

Abstract translation: 固态成像装置包括形成在半导体衬底上的单位像素。 每个单位像素包括光电转换器，浮动扩散，钉扎层和像素晶体管。 像素晶体管包括形成在半导体衬底上的栅电极，源极扩散层和漏极扩散层。 源极扩散层或漏极扩散层中的至少一个起到浮动扩散的作用。 钉扎层被像素晶体管的通道的底部和侧面处的浮动扩散覆盖。 浮动扩散的导电类型与钉扎层的导电类型相反。