公开(公告)号：US20210250487A1

公开(公告)日：2021-08-12

申请号：US17243101

申请日：2021-04-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiaki SATOU ,  Yasuo MIYAKE ,  Yasunori INOUE ,  Tokuhiko TAMAKI

IPC: H04N5/235 ,  H04N5/353 ,  H04N5/355 ,  H04N5/374 ,  G03B7/08 ,  H04N5/369 ,  H04N5/232 ,  H04N5/262 ,  H01L27/146

Abstract: An imaging device including a pixel, and a controller that sets a sensitivity of the pixel according to an external signal, where the external signal includes sound, vibration or inclination.

公开(公告)号：US20210006735A1

公开(公告)日：2021-01-07

申请号：US17026851

申请日：2020-09-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yasuo MIYAKE ,  Masashi MURAKAMI ,  Tokuhiko TAMAKI ,  Yoshiaki SATOU

IPC: H04N5/353 ,  H01L27/30 ,  H01L27/146

Abstract: An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.

公开(公告)号：US20190214590A1

公开(公告)日：2019-07-11

申请号：US16352552

申请日：2019-03-13

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tokuhiko TAMAKI

IPC: H01L51/42 ,  H04N5/374 ,  H04N9/04 ,  H01L31/00 ,  H01L27/146 ,  H01L31/10 ,  H04N5/33 ,  H01L51/44 ,  H01L51/00 ,  H01L27/30 ,  H04N5/361

CPC classification number: H01L51/428 ,  H01L27/146 ,  H01L27/307 ,  H01L31/00 ,  H01L31/10 ,  H01L51/0078 ,  H01L51/447 ,  H04N5/33 ,  H04N5/359 ,  H04N5/361 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/378 ,  H04N9/045 ,  Y02E10/549 ,  Y02P70/521

Abstract: An optical sensor includes a semiconductor layer including a first region, a second region, and a third region between the first region and the second region, a first electrode, a photoelectric conversion layer between the third region and the first electrode, and voltage supply circuitry applying a voltage between the first electrode and the first region to apply a bias voltage to the photoelectric conversion layer. The photoelectric conversion layer has a characteristic showing how a density of current flowing through the photoelectric conversion layer varies with the bias voltage applied to the photoelectric conversion layer. The characteristic includes a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in a first voltage range and a second voltage range, the third voltage range being between the first voltage range and the second voltage range.

公开(公告)号：US20220030189A1

公开(公告)日：2022-01-27

申请号：US17496589

申请日：2021-10-07

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tokuhiko TAMAKI

IPC: H04N5/378 ,  H04N5/225 ,  H04N5/355 ,  H04N5/369 ,  H01L27/146

Abstract: An imaging device includes: a first pixel including a first photoelectric converter that converts incident light into first signal charges, and a first charge storage node that accumulates the first signal charges; and a second pixel including a second photoelectric converter that converts incident light into second signal charges, and a second charge storage node that accumulates the second signal charges. An area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view. Capacitance of the first charge storage node is greater than capacitance of the second charge storage node.

公开(公告)号：US20210005650A1

公开(公告)日：2021-01-07

申请号：US17025620

申请日：2020-09-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI ,  Hirohisa Ohtsuki ,  Ryohei Miyagawa ,  Motonori Ishii

IPC: H01L27/146 ,  H04N5/3745

Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

公开(公告)号：US20200243609A1

公开(公告)日：2020-07-30

申请号：US16849210

申请日：2020-04-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi TOKUHARA ,  Tokuhiko TAMAKI

IPC: H01L27/30 ,  G01J5/24 ,  G01J1/42 ,  H01L51/42 ,  G01J5/08 ,  H01L51/44 ,  G01J1/04 ,  H04N5/33 ,  H04N5/378 ,  H01L51/00

Abstract: A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.

公开(公告)号：US20190313040A1

公开(公告)日：2019-10-10

申请号：US16447148

申请日：2019-06-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kazuko NISHIMURA ,  Tokuhiko TAMAKI ,  Masashi MURAKAMI

IPC: H04N5/369 ,  H04N5/378 ,  H01L27/146 ,  H04N5/363 ,  H04N5/3745 ,  H04N5/359

Abstract: An imaging device comprising: a first pixel cell including a first photoelectric converter generating a first signal, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode, and a first circuit coupled to the first electrode and detecting the first signal; and a second pixel cell including a second photoelectric converter generating a second signal, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and a second circuit coupled to the second electrode and detecting the second signal. A sensitivity of the first pixel cell is higher than that of the second pixel cell. A circuit configuration of the first circuit is different from that of the second circuit. The first circuit includes a feedback circuit configured to negatively feed back a voltage of the first electrode to the first electrode.

公开(公告)号：US20190260954A1

公开(公告)日：2019-08-22

申请号：US16402699

申请日：2019-05-03

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tokuhiko TAMAKI

IPC: H04N5/378 ,  H04N5/369 ,  H04N5/225 ,  H04N5/355

Abstract: An imaging device includes: a first pixel including a first photoelectric converter that converts incident light into first signal charges, and a first charge storage node that accumulates the first signal charges; and a second pixel including a second photoelectric converter that converts incident light into second signal charges, and a second charge storage node that accumulates the second signal charges. An area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view. Capacitance of the first charge storage node is greater than capacitance of the second charge storage node.

公开(公告)号：US20240365017A1

公开(公告)日：2024-10-31

申请号：US18662323

申请日：2024-05-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kazuko NISHIMURA ,  Tokuhiko TAMAKI ,  Masashi MURAKAMI

IPC: H04N25/585 ,  H01L27/146 ,  H04N25/62 ,  H04N25/65 ,  H04N25/75 ,  H04N25/77 ,  H04N25/778

CPC classification number: H04N25/585 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/62 ,  H04N25/65 ,  H04N25/75 ,  H04N25/77 ,  H04N25/778

Abstract: A camera system including an imaging device; and a signal processor. The imaging device includes; a first imaging cell having a first photoelectric converter generating a first signal; and a second imaging cell having a second photoelectric converter generating a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the number of saturation charges by the first photoelectric converter is greater than the number of saturation charges by the second photoelectric converter. The capacitor causes the second number of saturation charges to become greater than the first number of saturation charges.

公开(公告)号：US20240080585A1

公开(公告)日：2024-03-07

申请号：US18505019

申请日：2023-11-08

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tokuhiko TAMAKI

IPC: H04N25/75 ,  H01L27/146 ,  H04N23/54 ,  H04N23/55 ,  H04N25/585 ,  H04N25/702

CPC classification number: H04N25/75 ,  H01L27/14627 ,  H04N23/54 ,  H04N23/55 ,  H04N25/585 ,  H04N25/702

Abstract: An image pickup module including an imaging device which includes: a first photoelectric converter that converts incident light into first signal charges; a first node into which the first signal charges are input; a second photoelectric converter that converts incident light into second signal charges; and a second node into which the second signal charges are input. The image pickup module further including a signal processing circuit that processes an output signal from the imaging device, where an area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view, and capacitance of the first node is greater than capacitance of the second node.