公开(公告)号：US20210327962A1

公开(公告)日：2021-10-21

申请号：US17364493

申请日：2021-06-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: H01L27/30 ,  H01L27/146 ,  H01L31/10 ,  H01L51/00 ,  H01L51/42

Abstract: An imaging device includes: pixels arranged one-dimensionally or two-dimensionally, each of the pixels including an electrode that is electrically connected to the other pixels, a charge capturing unit that is separated from the other pixels, and a photoelectric conversion layer that is located between the electrode and the charge capturing unit, the photoelectric conversion layer being continuous among the pixels. The photoelectric conversion layer contains semiconductor carbon nanotubes, and one of a first substance and a second substance, the first substance having an electron affinity larger than that of the semiconducting carbon nanotubes, the second substance having a ionization energy smaller than that of the semiconductor carbon nanotubes.

公开(公告)号：US11031568B2

公开(公告)日：2021-06-08

申请号：US16274154

申请日：2019-02-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masaya Hirade ,  Manabu Nakata ,  Katsuya Nozawa ,  Yasunori Inoue

IPC: H01L51/44 ,  H01L51/42 ,  H01L27/30 ,  H01L51/00

Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

公开(公告)号：US10777699B2

公开(公告)日：2020-09-15

申请号：US15993552

申请日：2018-05-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: H01L31/107 ,  H01L51/42 ,  H01L31/0352 ,  H01L31/0256 ,  H01L51/44 ,  H01L27/30 ,  H01L31/02 ,  H01L51/00

Abstract: A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.

公开(公告)号：US10672836B2

公开(公告)日：2020-06-02

申请号：US15729739

申请日：2017-10-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: H01L27/30 ,  H01L51/42 ,  H01L27/146 ,  H01L31/10 ,  H01L51/00

Abstract: An imaging device includes: pixels arranged one-dimensionally or two-dimensionally, each of the pixels including an electrode that is electrically connected to the other pixels, a charge capturing unit that is separated from the other pixels, and a photoelectric conversion layer that is located between the electrode and the charge capturing unit, the photoelectric conversion layer being continuous among the pixels. The photoelectric conversion layer contains semiconductor carbon nanotubes, and one of a first substance and a second substance, the first substance having an electron affinity larger than that of the semiconducting carbon nanotubes, the second substance having a ionization energy smaller than that of the semiconductor carbon nanotubes.

公开(公告)号：US10542228B2

公开(公告)日：2020-01-21

申请号：US15497157

申请日：2017-04-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa ,  Yasuo Miyake

IPC: H04N5/374 ,  H01L27/144 ,  H01L27/146 ,  H04N5/225 ,  H04N5/351 ,  H04N5/369 ,  H04N5/378

Abstract: An imaging system includes a first illuminator that irradiates a subject with light whose intensity varies over time; and a first imaging device that includes a first imaging cell having a variable sensitivity, and a first sensitivity control line electrically connected to the first imaging cell. The first imaging cell includes a photoelectron conversion area that receives light from the subject to generate a signal charge, and a signal detection circuit that detects the signal charge. During an exposure period, the first sensitivity control line supplies to the first imaging cell a first sensitivity control signal having a waveform expressed by a first function that takes only positive values by adding a first constant to one basis from among bases of a system of functions constituting an orthogonal system.