公开(公告)号：US12152938B2

公开(公告)日：2024-11-26

申请号：US17938515

申请日：2022-10-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: G01J3/433 ,  G01J3/02 ,  G01J3/28

Abstract: An imaging system includes: a first light source that emits first light having a spectrum including discrete first frequency components arranged at first frequency intervals; a second light source that emits second light having a spectrum including discrete second frequency components arranged at second frequency intervals, the second frequency intervals being different from the first frequency intervals; a mixing optical system that mixes the first light and the second light to generate third light including at least one optical beat the intensity of which changes at a beat frequency expressed by the difference between at least one of the discrete first frequency components and at least one of the discrete second frequency components; an imaging element having a variable sensitivity in an exposure period; and a control circuit that changes the sensitivity of the imaging element at the beat frequency of the at least one optical beat.

公开(公告)号：US11177313B2

公开(公告)日：2021-11-16

申请号：US17121828

申请日：2020-12-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: H04N5/349 ,  H01L27/148 ,  G06T7/73 ,  H01L27/142 ,  H04N5/235 ,  H04N5/341 ,  H04N5/225

Abstract: An imaging system includes an imaging optical system, an imaging device, an actuator, and control circuitry. The actuator changes a relative position of a plurality of pixel cells and an image of a subject. The pixel cells include a photoelectric converter and a charge accumulation region. The control circuitry sets the relative position to a first position, and a first signal charge obtained at the photoelectric converter during a first exposure is accumulated in the charge accumulation region. The relative position is set to a second position different from the first position, and a second signal charge obtained at the photoelectric converter during a second exposure time that is different from the first exposure time is accumulated in the charge accumulation region in addition to the first signal charge.

公开(公告)号：US10903264B2

公开(公告)日：2021-01-26

申请号：US16447147

申请日：2019-06-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: H04N5/349 ,  H01L27/148 ,  G06T7/73 ,  H01L27/142 ,  H04N5/235 ,  H04N5/341 ,  H04N5/225

Abstract: An imaging system includes an imaging optical system, an imaging device, an actuator, and control circuitry. The actuator changes a relative position of a plurality of pixel cells and an image of a subject. The pixel cells have variable sensitivity, and include a photoelectric converter and a charge accumulation region. The control circuitry sets the relative position to a first position, and also sets the sensitivity of each pixel cell to a first sensitivity. A first signal charge obtained at the photoelectric converter is accumulated in the charge accumulation region. The relative position is set to a second position different from the first position, and also the sensitivity of each pixel cell is set to a second sensitivity different from the first sensitivity. A second signal charge obtained at the photoelectric converter is accumulated in the charge accumulation region in addition to the first signal charge.

公开(公告)号：US09605998B2

公开(公告)日：2017-03-28

申请号：US14825304

申请日：2015-08-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: G01J1/04 ,  G01S17/32 ,  G01S17/10 ,  G01S17/36 ,  G01S17/89 ,  G01S17/93 ,  G01S7/48 ,  G01S7/487 ,  G01S7/493 ,  G01S7/499 ,  G01S7/491 ,  G02F1/35

CPC classification number: G01J1/0407 ,  G01S7/4802 ,  G01S7/487 ,  G01S7/4917 ,  G01S7/493 ,  G01S7/499 ,  G01S17/10 ,  G01S17/107 ,  G01S17/32 ,  G01S17/36 ,  G01S17/89 ,  G01S17/936 ,  G02F1/3534

Abstract: A measurement system, comprising: a first light source that generates first light and irradiates an object with the first light, at least one of an intensity, a polarization state, and a wavelength being modulated with a first period in the first light; a second light source that generates second light, at least one of an intensity, a polarization state, and a wavelength being modulated with a second period in the second light; a first optical system that mixes light from the object based on the first light with the second light; a nonlinear optical crystal that generates third light from the mixed light by sum-frequency generation phenomenon, the third light having a frequency equivalent to a sum of a frequency of the light from the object based on the first light and a frequency of the second light; and a photodetector that measures an intensity of the third light.

公开(公告)号：US12048170B2

公开(公告)日：2024-07-23

申请号：US17205061

申请日：2021-03-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa ,  Takeyoshi Tokuhara ,  Nozomu Matsukawa ,  Sanshiro Shishido

IPC: H10K39/32 ,  H10K19/20 ,  H10K30/30 ,  H10K30/87 ,  H10K85/10 ,  H10K85/20

CPC classification number: H10K39/32 ,  H10K19/20 ,  H10K30/30 ,  H10K30/87 ,  H10K85/113 ,  H10K85/115 ,  H10K85/221

Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

公开(公告)号：US11094746B2

公开(公告)日：2021-08-17

申请号：US16831231

申请日：2020-03-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: H01L27/30 ,  H01L27/146 ,  H01L31/10 ,  H01L51/00 ,  H01L51/42

Abstract: An imaging device includes: pixels arranged one-dimensionally or two-dimensionally, each of the pixels including an electrode that is electrically connected to the other pixels, a charge capturing unit that is separated from the other pixels, and a photoelectric conversion layer that is located between the electrode and the charge capturing unit, the photoelectric conversion layer being continuous among the pixels. The photoelectric conversion layer contains semiconductor carbon nanotubes, and one of a first substance and a second substance, the first substance having an electron affinity larger than that of the semiconducting carbon nanotubes, the second substance having a ionization energy smaller than that of the semiconductor carbon nanotubes.

公开(公告)号：US12101949B2

公开(公告)日：2024-09-24

申请号：US17700941

申请日：2022-03-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shinichi Machida ,  Katsuya Nozawa ,  Sanshiro Shishido

IPC: H10K30/82 ,  H10K39/32 ,  H10K85/20

CPC classification number: H10K30/821 ,  H10K39/32 ,  H10K85/221

Abstract: A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.

公开(公告)号：US11025847B2

公开(公告)日：2021-06-01

申请号：US16703046

申请日：2019-12-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa ,  Yasuo Miyake

IPC: H04N5/374 ,  H04N5/3745 ,  H04N5/355 ,  G01S17/36 ,  G01S17/894 ,  H01L27/144 ,  H01L27/146 ,  H04N5/225 ,  H04N5/351 ,  H04N5/369 ,  H04N5/378

Abstract: An imaging device including a first imaging cell having a variable sensitivity; and a first sensitivity control line electrically connected to the first imaging cell, where the first imaging cell comprises a photoelectron conversion area that generates a signal charge by incidence of light, and a signal detection circuit that detects the signal charge. The photoelectron conversion area includes a first electrode, a translucent second electrode connected to the first sensitivity control line, and a photoelectric conversion layer disposed between the first electrode and the second electrode, and during an exposure period from a reset of the first imaging cell until a readout of the signal charge accumulated in the first imaging cell by exposure, the first sensitivity control line supplies to the first imaging cell a first sensitivity control signal having a waveform expressed by a first function.

公开(公告)号：US10847669B1

公开(公告)日：2020-11-24

申请号：US16987525

申请日：2020-08-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa

IPC: H01L31/107 ,  H01L51/42 ,  H01L31/0352 ,  H01L31/0256 ,  H01L27/30 ,  H01L51/44 ,  H01L31/02 ,  H01L51/00

Abstract: A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.

公开(公告)号：US10708511B2

公开(公告)日：2020-07-07

申请号：US16124435

申请日：2018-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Satoshi Sato ,  Sanshiro Shishido ,  Katsuya Nozawa ,  Takeo Azuma ,  Masaaki Yanagida ,  Takeyoshi Tokuhara ,  Kunio Nobori

IPC: H04N7/18 ,  H04N5/235 ,  G06T7/521 ,  G06T7/246 ,  G01S7/481 ,  G01S17/58 ,  G01S17/89 ,  G01C3/08 ,  H04N5/353 ,  H04N5/3745 ,  H01L27/146

Abstract: A three-dimensional motion obtaining apparatus includes: a light source; a charge amount obtaining circuit that includes pixels and obtains, for each of the pixels, a first charge amount under a first exposure pattern and a second charge amount under a second exposure pattern having an exposure period that at least partially overlaps an exposure period of the first exposure pattern; and a processor that controls a light emission pattern for the light source, the first exposure pattern, and the second exposure pattern. The processor estimates a distance to a subject for each of the pixels on the basis of the light emission pattern and on the basis of the first charge amount and the second charge amount of each of the pixels obtained by the charge amount obtaining circuit, and estimates an optical flow for each of the pixels on the basis of the first exposure pattern, the second exposure pattern, and the first charge amount and the second charge amount obtained by the charge amount obtaining circuit.