公开(公告)号：US20060168390A1

公开(公告)日：2006-07-27

申请号：US11040600

申请日：2005-01-21

Applicant: Thomas Speier ,  James Dieffenderfer ,  Ravi Rajagopalan

Inventor： Thomas Speier ,  James Dieffenderfer ,  Ravi Rajagopalan

IPC: G06F12/00 ,  G06F12/06

CPC classification number: G06F12/0802 ,  G06F12/0851 ,  G06F2212/601 ,  Y02D10/13

Abstract: Techniques for controllably allocating a portion of a plurality of memory banks as cache memory are disclosed. To this end, a configuration tracker and a bank selector are employed. The configuration tracker configures whether each memory bank is to operate in a cache or not. The bank selector has a plurality of bank distributing functions. Upon receiving an incoming address, the bank selector determines the configuration of memory banks currently operating as the cache and applies an appropriate bank distributing function based on the configuration of memory banks. The applied bank distributing function utilizes bits in the incoming address to access one of the banks configured as being in the cache.

公开(公告)号：US20050011120A1

公开(公告)日：2005-01-20

申请号：US10903979

申请日：2004-07-30

Applicant: Ravi Rajagopalan

Inventor： Ravi Rajagopalan

IPC: A01G9/02 ,  A47G7/02

CPC classification number: A01G9/024

Abstract: A liner for use in a horticultural planter contains an integral water tray which is located between inner and outer fibrous layers of a liner. The water tray extends from a bottom surface of the liner toward a peripheral top edge. The water tray is integral with the liner and located between outer and inner fibrous layers. An overflow region is included with the water tray near the peripheral top edge of the liner.

Abstract translation: 用于园艺种植机的衬里包含位于衬里的内纤维层和外纤维层之间的整体水盘。 水盘从衬垫的底表面朝向周边顶部边缘延伸。 水盘与内衬一体，位于外纤维层和内纤维层之间。 在靠近衬管的周边顶部边缘的水盘中包括溢流区域。

公开(公告)号：US06156382A

公开(公告)日：2000-12-05

申请号：US857658

申请日：1997-05-16

Applicant: Ravi Rajagopalan ,  Steve Ghanayem ,  Manabu Yamazaki ,  Keiichi Ohtsuka ,  Yuji Maeda

Inventor： Ravi Rajagopalan ,  Steve Ghanayem ,  Manabu Yamazaki ,  Keiichi Ohtsuka ,  Yuji Maeda

IPC: C23C16/08 ,  C23C16/02 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/76838 ,  C23C16/02 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28556

Abstract: A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF.sub.6 and SiH.sub.4 are introduced into a deposition chamber. Next, the flow of WF.sub.6 and SiH.sub.4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF.sub.6 is reintroduced into the chamber along with H.sub.2 and B.sub.2 H.sub.6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.

Abstract translation: 用于在基底上沉积钨层的多步化学气相沉积工艺。 沉积工艺的第一步包括将WF 6和SiH 4引入沉积室的成核步骤。 接下来，停止WF6和SiH4的流动，并将乙硼烷引入室中5-25秒。 最后，在大量沉积步骤期间，将WF6与H 2和B 2 H 6流一起重新引入室中，以在衬底上沉积钨层。 在优选的实施方案中，本体沉积步骤还将氮气引入工艺气体中。