公开(公告)号：US5665988A

公开(公告)日：1997-09-09

申请号：US721939

申请日：1996-09-27

Applicant: Qin Huang

Inventor： Qin Huang

IPC: H01L29/10 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L23/58 ,  H01L29/76 ,  H01L31/111

CPC classification number: H01L29/7436 ,  H01L29/1016 ,  H01L29/7392 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7455 ,  H01L29/749 ,  H01L2924/0002

Abstract: A plurality of minority carriers, which cause a conductivity modulation effect in a semiconductor device, are supplied from a separately disposed minority carrier injection region which is alternately connected to and separated from a drain region. The minority carriers are injected via the minority carrier injection region connected to the drain region during forward biasing. The minority carrier injection is stopped by separating the injection region from the drain region when the turn-off operation begins. This operation reduces the carriers that need to be swept off during a turn-off operation. The turn-off time is shortened in a bipolar semiconductor device, such as an IGBT with a reduced on-voltage, by utilizing the conductivity modulation to reduce switching loss.

Abstract translation: 在半导体器件中引起电导率调制效应的多个少数载流子从交替地连接到漏极区域并从漏极区域分离的单独设置的少数载流子注入区域提供。 通过在正向偏置期间连接到漏极区域的少数载流子注入区域来注入少数载流子。 当关断操作开始时，通过将注入区域与漏极区域分离来停止少数载流子注入。 该操作减少了在关闭操作期间需要扫除的载体。 通过利用电导率调制来减少开关损耗，双极半导体器件（例如具有降低的导通电压的IGBT）的关断时间缩短。

公开(公告)号：US09444275B2

公开(公告)日：2016-09-13

申请号：US13600280

申请日：2012-08-31

Applicant: Qin Huang ,  Yu Du

Inventor： Qin Huang ,  Yu Du

IPC: H02J7/00 ,  G08B21/00 ,  H02J7/34 ,  H02J7/04 ,  H02J7/16

CPC classification number: H02J7/0029 ,  G08B21/00 ,  H02J7/0068 ,  H02J7/04 ,  H02J7/16 ,  H02J7/34

Abstract: An energy storage system is provided. The system includes a plurality of energy storage modules connected in parallel. Each energy storage module has an energy storage source, a bidirectional current converter configured for supplying charge to the energy storage source from a power source and for discharging current for use by an electrical device, a monitoring module for monitoring the energy storage source and the current converter, and a controller configured to control the current converter based upon monitored characteristics of the storage source and the current converter to produce a respective output signal for each module. A communications module is in connection with each output signal of the energy storage modules and configured for communicating a combined output signal with one of the power source and the electrical device.

Abstract translation: 提供储能系统。 该系统包括并联连接的多个能量存储模块。 每个能量存储模块具有能量存储源，双向电流转换器，其被配置为从电源向能量存储源提供电荷并且用于放电以供电子设备使用;监视模块，用于监视能量存储源和电流 转换器和配置成基于所监视的存储源和电流转换器的特性来控制电流转换器以产生每个模块的相应输出信号的控制器。 通信模块与能量存储模块的每个输出信号相连，并被配置为将组合的输出信号与电源和电气设备之一进行通信。

公开(公告)号：US08476710B2

公开(公告)日：2013-07-02

申请号：US13413175

申请日：2012-03-06

Applicant: Qin Huang

Inventor： Qin Huang

IPC: H01L23/62

CPC classification number: H01L27/088 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823885 ,  H01L27/092 ,  H01L29/1087 ,  H02M3/1588 ,  Y02B70/1466

Abstract: A vertical complementary field effect transistor (FET) relates to the production technology of semiconductor chips and more particularly to the production technology of power integration circuit. A part of the substrate bottom of the invention extends into the middle layer and form the plug between the two MOS units. There is an output terminal under the substrate layer. When on-state voltage is applied on the gate electrode of the two MOS units, two conduction paths are formed from MOS unit-plug-substrate to the output terminal. This technology can integrate more than two MOS devices. Therefore, the die size is reduced.

Abstract translation: 垂直互补场效应晶体管（FET）涉及半导体芯片的生产技术，更具体地涉及功率集成电路的生产技术。 本发明的基板底部的一部分延伸到中间层，并在两个MOS单元之间形成插头。 在基底层下面有一个输出端子。 当在两个MOS单元的栅电极上施加通态电压时，从MOS单元插头基板到输出端子形成两个导通路径。 该技术可以集成两个以上的MOS器件。 因此，管芯尺寸减小。

公开(公告)号：US20130051102A1

公开(公告)日：2013-02-28

申请号：US13595883

申请日：2012-08-27

Applicant: Qin Huang ,  Yu Du ,  Wenxi Yao

Inventor： Qin Huang ,  Yu Du ,  Wenxi Yao

IPC: H02M7/04 ,  H02M7/155 ,  H02M7/217

CPC classification number: H02M7/217

Abstract: An alternating current-to-direct current (AC-DC) converter is provided. The converter may include a transformer having a primary side and a secondary side. A first bi-directional switch and a first inductor may be connected in series between a positive terminal of an AC source and a first terminal of the primary side of the transformer. A second bi-directional switch and a second inductor may be connected between the positive terminal of the AC source and a second terminal of the primary side of the transformer and connected in parallel with the first bi-directional switch.

Abstract translation: 提供交流电直流电（AC-DC）转换器。 转换器可以包括具有初级侧和次级侧的变压器。 第一双向开关和第一电感器可以串联连接在AC电源的正极端子和变压器初级侧的第一端子之间。 第二双向开关和第二电感器可以连接在AC源的正极端子和变压器初级侧的第二端子之间并与第一双向开关并联连接。

公开(公告)号：US5998811A

公开(公告)日：1999-12-07

申请号：US24117

申请日：1998-02-17

Applicant: Qin Huang

Inventor： Qin Huang

IPC: H01L29/745 ,  H01L29/749

CPC classification number: H01L29/7455 ,  H01L29/749

Abstract: A trench emitter controlled thyristor 30 having a collector layer 32, a drift layer 34, a body layer 36, and a floating layer 38. Each of the layers 32, 34, 36, and 38 contacts the adjacent layer(s). The floating layer 38 does not cover the entirety of the adjacent layer (the body layer 36) but at one of the lateral ends of the thyristor 30, an emitter 40 is formed. A gate area (or electrode) 43 is formed to span laterally across the thyristor 30. Additionally, trenches are formed into the lateral edges 44 of the body layer 36 and a portion of the drift layer 34. Within the trenches 44 are formed additional gate area 42 which runs for substantially the length of the thyristor 30. The gate 42 is kept electrically isolated from the remainder of the thyristor by an insulating region 46 directly over the body layer 36.

Abstract translation: 具有集电极层32，漂移层34，主体层36和浮动层38的沟槽发射极控制晶闸管30。层32,34,36和38中的每一个接触相邻层。 浮动层38不覆盖相邻层（体层36）的整体，但是在晶闸管30的一个横向端部形成有发射体40。 形成栅极区域（或电极）43横跨晶闸管30跨越。此外，沟槽形成为主体层36的侧边缘44和漂移层34的一部分。在沟槽44内形成附加栅极 区域42的长度大致为晶闸管30的长度。门42通过直接在主体层36上方的绝缘区域46与晶闸管的其余部分保持电隔离。