公开(公告)号：US5335219A

公开(公告)日：1994-08-02

申请号：US768139

申请日：1991-09-30

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David A. Strand ,  Wolodymyr Czubatyj ,  Jesus Gonzalez-Hernandez ,  Hellmut Fritzsche ,  Qiuyi Ye ,  Sergey A. Kostylev ,  Benjamin S. Chao

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David A. Strand ,  Wolodymyr Czubatyj ,  Jesus Gonzalez-Hernandez ,  Hellmut Fritzsche ,  Qiuyi Ye ,  Sergey A. Kostylev ,  Benjamin S. Chao

IPC分类号： H01L27/10 ,  G11C11/56 ,  G11C16/02 ,  H01H45/00 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L27/24 ,  H01L29/788 ,  H01L29/792 ,  H01L45/00 ,  G11C13/00

CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/115 ,  G11C13/04

摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

摘要翻译： 一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被 删除。 基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中 存储器在显着降低的能量水平下显示出高数量级的开关速度。 特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。