公开(公告)号：US20190393578A1

公开(公告)日：2019-12-26

申请号：US16018768

申请日：2018-06-26

Applicant: Raytheon Company

Inventor： Matthew A. Morton ,  Gerhard Sollner ,  Jason C. Soric

IPC: H01P1/23 ,  H01P3/08 ,  H01P11/00

Abstract: A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a magnetic material having first and second opposing surfaces. A first conductor is disposed on the first surface of the magnetic material, where a width of the first conductor decreases from a first end of the FSL to a second end of the FSL along a length of the FSL. Two second conductors are disposed on the second surface of the magnetic material, where a width of a gap between the two second conductors decreases from the first end of the FSL to the second end of the FSL along a length of the FSL. The first conductor and two second conductors form a biplanar waveguide transmission line.

公开(公告)号：US09711839B2

公开(公告)日：2017-07-18

申请号：US14996881

申请日：2016-01-15

Applicant: Raytheon Company

Inventor： Matthew A. Morton ,  Gerhard Sollner

IPC: H01P9/00 ,  H01P1/22 ,  H01P1/203 ,  H01P9/02 ,  H01P1/365

CPC classification number: H01P9/00 ,  H01P1/2039 ,  H01P1/227 ,  H01P1/365 ,  H01P9/02

Abstract: The present disclosure is directed towards a frequency selective limiter having a first magnetic material disposed over a first dielectric material and a strip conductor disposed over the magnetic material. In some embodiments, the frequency selective limiter includes a second magnetic material disposed over the strip conductor and a second dielectric material disposed over the second magnetic material. The first and second dielectric material may have a lower relative permittivity than the first and second magnetic material. In an embodiment, the frequency selective limiter includes a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

公开(公告)号：US09577328B2

公开(公告)日：2017-02-21

申请号：US14256216

申请日：2014-04-18

Applicant: Raytheon Company

Inventor： Matthew A. Morton ,  Jonathan P. Comeau ,  Anthony Kopa

IPC: H01Q3/26 ,  H03D7/00 ,  H03D7/16 ,  H01Q3/00

CPC classification number: H01Q3/2682 ,  H03D7/00 ,  H03D7/165 ,  H03D2200/006

Abstract: A frequency conversion circuit having a plurality of N signal channels, each being fed an input signal and a train of pluses having a period T and a duty cycle T/N. Each channel includes: a sampler coupled the input signal and being responsive to sampling signals; and a controllable time delay for producing the train of sampling signals in response to the train of pulses, the time delay imparting a time delay to the pulses in accordance with a time delay command signal fed to the time delay. Each one of the sampling signals is produced by the time delay in each one of the channels with the period T and the duty cycle T/N with the sampling signals in one of the trains of the sampling signals being delayed with respect to the sampling signals in another one of the trains the sampling signals a time T/N.

Abstract translation: 一种具有多个N个信号通道的频率转换电路，每个信号通道馈送有输入信号和一个具有周期T和占空比T / N的脉冲串。 每个通道包括：采样器耦合输入信号并响应采样信号; 以及响应于脉冲序列产生采样信号序列的可控时间延迟，所述时间延迟根据馈送到时间延迟的时间延迟命令信号向脉冲施加时间延迟。 采样信号中的每一个由具有周期T和占空比T / N的每个信道中的时间延迟产生，采样信号的列中的一个采样信号相对于采样信号被延迟 在另一列火车中，采样信号为时间T / N。

公开(公告)号：US09520909B2

公开(公告)日：2016-12-13

申请号：US14560842

申请日：2014-12-04

Applicant: RAYTHEON COMPANY

Inventor： Tina P. Srivastava ,  Matthew A. Morton ,  John Cangeme

IPC: H04B1/04 ,  H04B1/00 ,  H03G11/00 ,  H03H2/00

Abstract: A transmit drive circuit with high signal to noise and frequency agility. In one embodiment, a transmit circuit includes a digital to analog converter, an amplifier, and a signal to noise enhancer, the signal to noise enhancer being a nonlinear passive device that attenuates low-power signals while transmitting high power signals with little loss. The signal to noise enhancer may be fabricated as a thin film of yttrium iron garnet (YIG) epitaxially grown on a gadolinium gallium garnet (GGG) substrate, the GGG substrate secured to a microwave transmission line from the input to the output of the signal to noise enhancer, such that the thin film of yttrium iron garnet is close to the transmission line.

公开(公告)号：US09473201B2

公开(公告)日：2016-10-18

申请号：US14560834

申请日：2014-12-04

Applicant: RAYTHEON COMPANY

Inventor： Matthew A. Morton ,  Tina P. Srivastava

IPC: H04K1/02 ,  H04L25/03 ,  H04L25/49 ,  H04B1/68 ,  H04B15/04

Abstract: A frequency conversion system with improved performance. In one embodiment an image reject mixer is used to perform frequency conversion providing an initial degree of suppression of the image and local oscillator leakage signals, and a signal to noise enhancer (SNE) is used to further suppress the image and local oscillator signals, the signal to noise enhancer being a nonlinear passive device that attenuates low-power signals while transmitting high power signals with little loss. The signal to noise enhancer may be fabricated as a thin film of yttrium iron garnet (YIG) epitaxially grown on a gadolinium gallium garnet (GGG) substrate, the GGG substrate secured to a microwave transmission line from the input to the output of the signal to noise enhancer, such that the thin film of yttrium iron garnet is close to the transmission line.

公开(公告)号：US20160181679A1

公开(公告)日：2016-06-23

申请号：US14996881

申请日：2016-01-15

Applicant: Raytheon Company

Inventor： Matthew A. Morton ,  Gerhard Sollner

IPC: H01P1/22 ,  H01P9/00

CPC classification number: H01P9/00 ,  H01P1/2039 ,  H01P1/227 ,  H01P1/365 ,  H01P9/02

Abstract: The present disclosure is directed towards a frequency selective limiter having a first magnetic material disposed over a first dielectric material and a strip conductor disposed over the magnetic material. In some embodiments, the frequency selective limiter includes a second magnetic material disposed over the strip conductor and a second dielectric material disposed over the second magnetic material. The first and second dielectric material may have a lower relative permittivity than the first and second magnetic material. In an embodiment, the frequency selective limiter includes a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

Abstract translation: 本公开涉及一种频率选择限制器，其具有设置在第一电介质材料上的第一磁性材料和设置在磁性材料上的带状导体。 在一些实施例中，频率选择限制器包括设置在带状导体上的第二磁性材料和设置在第二磁性材料上的第二介电材料。 第一和第二介电材料可以具有比第一和第二磁性材料低的相对介电常数。 在一个实施例中，频率选择限制器包括慢波结构，其设置为将由慢波结构传播的电磁能产生的磁场磁耦合到磁性材料中。

公开(公告)号：US20160164569A1

公开(公告)日：2016-06-09

申请号：US14560834

申请日：2014-12-04

Applicant: RAYTHEON COMPANY

Inventor： Matthew A. Morton ,  Tina P. Srivastava

IPC: H04B1/68 ,  H04B15/04

CPC classification number: H04B1/68 ,  H04B1/30 ,  H04B15/04

Abstract: A frequency conversion system with improved performance. In one embodiment an image reject mixer is used to perform frequency conversion providing an initial degree of suppression of the image and local oscillator leakage signals, and a signal to noise enhancer (SNE) is used to further suppress the image and local oscillator signals, the signal to noise enhancer being a nonlinear passive device that attenuates low-power signals while transmitting high power signals with little loss. The signal to noise enhancer may be fabricated as a thin film of yttrium iron garnet (YIG) epitaxially grown on a gadolinium gallium garnet (GGG) substrate, the GGG substrate secured to a microwave transmission line from the input to the output of the signal to noise enhancer, such that the thin film of yttrium iron garnet is close to the transmission line.

Abstract translation: 具有改进性能的变频系统。 在一个实施例中，使用图像抑制混频器来执行频率转换，提供图像的初始抑制程度和本地振荡器泄漏信号，并且使用信噪比增强器（SNE）来进一步抑制图像和本地振荡器信号， 信噪比增强器是一种非线性无源器件，可在损耗较小的功率信号的同时衰减低功率信号。 信号噪声增强器可以制造为在钆镓石榴石（GGG）衬底上外延生长的钇铁石榴石（YIG）的薄膜，GGG衬底固定到微波传输线，从输入到信号的输出到 噪声增强器，使得钇铁石榴石的薄膜接近传输线。

公开(公告)号：US09300028B2

公开(公告)日：2016-03-29

申请号：US14077909

申请日：2013-11-12

Applicant: Raytheon Company

Inventor： Matthew A. Morton ,  Francois Y. Colomb ,  Robert E. Leoni ,  Colin S. Whelan ,  Traugott Carl Ludwig Gerhard Soliner

IPC: H01P9/00 ,  H01P9/02 ,  H01P1/22 ,  H01P1/203

CPC classification number: H01P9/02 ,  H01P1/2039 ,  H01P1/227 ,  H01P9/00

Abstract: A selective frequency limiter having a magnetic material and a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

Abstract translation: 具有磁性材料和慢波结构的选择性频率限制器被设置为将通过慢波结构传播的电磁能产生的磁场磁耦合到磁性材料中。

公开(公告)号：US09154173B1

公开(公告)日：2015-10-06

申请号：US14256214

申请日：2014-04-18

Applicant: Raytheon Company

Inventor： Matthew A. Morton ,  Jonathan P. Comeau ,  Anthony Kopa

IPC: H04B1/26 ,  H03B19/00 ,  H04B1/28

CPC classification number: H04B1/28 ,  H03D7/165 ,  H04B1/16

Abstract: A frequency conversion circuit having a plurality of N signal channels, each being fed an input signal and a train of pluses having a period T and a duty cycle T/N. Each signal channel includes: a column III-V semiconductor sampler coupled the input signal and being responsive to sampling signals; and a column IV semiconductor controllable time delay for producing the train of sampling signals in response to a train of pulses produced on the column IV semiconductor, the time delay imparting a time delay to the pulses in accordance with a time delay command signal fed to the time delay. Each one of the sampling signals is produced by the time delay in each one of the channels with the period T and the duty cycle T/N with the sampling signals in one of the trains of the sampling signals being delayed with respect to the sampling signals in another one of the trains the sampling signals a time T/N.

Abstract translation: 一种具有多个N个信号通道的频率转换电路，每个信号通道馈送有输入信号和一个具有周期T和占空比T / N的脉冲串。 每个信号通道包括：耦合输入信号并对采样信号作出响应的列III-V半导体采样器; 以及列IV半导体可控时间延迟，用于响应于在列IV半导体上产生的脉冲序列产生采样信号序列，所述延时根据馈送到所述第一IV半导体的时间延迟命令信号向脉冲施加时间延迟 时间延迟 采样信号中的每一个由具有周期T和占空比T / N的每个信道中的时间延迟产生，采样信号的列中的一个采样信号相对于采样信号被延迟 在另一列火车中，采样信号为时间T / N。