公开(公告)号：US09379127B2

公开(公告)日：2016-06-28

申请号：US14745340

申请日：2015-06-19

Applicant: Renesas Electronics Corporation

Inventor： Koichi Toba ,  Yasushi Ishii ,  Hiraku Chakihara ,  Kota Funayama ,  Yoshiyuki Kawashima ,  Takashi Hashimoto

IPC: H01L29/792 ,  H01L27/115 ,  H01L21/28 ,  H01L29/423

CPC classification number: H01L27/11568 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/42344 ,  H01L29/792

Abstract: A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.