公开(公告)号：US10714438B2

公开(公告)日：2020-07-14

申请号：US16151724

申请日：2018-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinchan Ahn ,  Won-young Kim ,  Chanho Lee

IPC: H01L23/00 ,  H01L23/522

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a metal line layer on a semiconductor substrate, and a metal terminal on the metal line layer. The metal line layer includes metal lines, and a passivation layer having a non-planarized top surface including flat surfaces on the metal lines and a concave surface between the metal lines. The metal terminal is provided on the passivation layer. Opposite lateral surfaces of the metal terminal facing each other are provided on the flat surfaces of the passivation layer.

公开(公告)号：US09960112B2

公开(公告)日：2018-05-01

申请号：US15259024

申请日：2016-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho Lee ,  Hyunsoo Chung ,  Myeong Soon Park

IPC: H01L23/522 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L23/5223 ,  H01L23/49816 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14104 ,  H01L2224/14166 ,  H01L2224/16238 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A semiconductor device comprising: a substrate; a decoupling capacitor disposed on the substrate; a first connection pad vertically overlapping with the decoupling capacitor; a passivation layer exposing a portion of the first connection pad; and a first solder bump disposed on the first connection pad and covering a portion of a top surface of the passivation layer.