公开(公告)号：US20220173255A1

公开(公告)日：2022-06-02

申请号：US17461034

申请日：2021-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Taehwan MOON ,  Hagyoul BAE ,  Seunggeol NAM ,  Sangwook KIM ,  Kwanghee LEE

IPC: H01L29/86 ,  H01L27/115 ,  H01L51/05 ,  H01L27/28

Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

公开(公告)号：US20220149166A1

公开(公告)日：2022-05-12

申请号：US17399175

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwanghee LEE ,  Sangwook KIM

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/24 ,  H01L27/088 ,  H01L29/06

Abstract: A field-effect transistor includes a gate structure comprising a structure in which a first insulating layer, a first gate electrode, and a second insulating layer are sequentially stacked on a first conductive layer, the gate structure surrounding a first hole through the first insulating layer and exposing a part of the first conductive layer; a second conductive layer on the second insulating layer and surrounding a second hole connected to the first hole and exposing a part of the first conductive layer; a first gate insulating layer covering an inner wall of the gate structure exposed by the first hole; a semiconductor layer covering a part of the first conductive layer exposed through the first hole and the second hole, the first gate insulating layer, and the second conductive layer; a second gate insulating layer covering the semiconductor layer; and a second gate electrode filling the first and second holes.

公开(公告)号：US20210028235A1

公开(公告)日：2021-01-28

申请号：US17071364

申请日：2020-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Seunghoon HAN ,  Kwanghee LEE ,  Yongwan JIN ,  Yongsung KIM ,  Changgyun SHIN ,  Jeongyub LEE ,  Amir ARBABI ,  Andrei FARAON ,  Yu HORIE

IPC: H01L27/30 ,  H01L27/146

Abstract: An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.

公开(公告)号：US20170287981A1

公开(公告)日：2017-10-05

申请号：US15473767

申请日：2017-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Seunghoon HAN ,  Kwanghee LEE ,  Yongwan JIN ,  Yongsung KIM ,  Changgyun SHIN ,  Jeongyub LEE ,  Amir ARBABI ,  Andrei FARAON ,  Yu HORIE

IPC: H01L27/30 ,  H01L27/146

CPC classification number: H01L27/307 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645

Abstract: An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.