公开(公告)号：US10367006B2

公开(公告)日：2019-07-30

申请号：US15428340

申请日：2017-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L29/24 ,  H01L27/12 ,  H01L29/786 ,  H01L29/20 ,  H01L29/10

Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

公开(公告)号：US10229904B2

公开(公告)日：2019-03-12

申请号：US14700455

申请日：2015-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L27/02

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

公开(公告)号：US09673451B2

公开(公告)日：2017-06-06

申请号：US15368993

申请日：2016-12-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomoya Futamura ,  Tamae Moriwaka ,  Takahiro Kawakami ,  Junpei Momo ,  Nobuhiro Inoue

IPC: H01M4/583 ,  H01M4/58 ,  H01M4/88 ,  H01M10/0525 ,  H01M4/02

CPC classification number: H01M10/0525 ,  C30B1/00 ,  H01M4/13 ,  H01M4/136 ,  H01M4/362 ,  H01M4/5825 ,  H01M4/665 ,  H01M4/668 ,  H01M2004/021 ,  H01M2004/028 ,  Y02E60/122 ,  Y02P70/54

Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.

公开(公告)号：US09627686B2

公开(公告)日：2017-04-18

申请号：US14595355

申请日：2015-01-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomoya Futamura

IPC: H01M4/58 ,  C01B25/45 ,  H01M10/0525 ,  H01M4/02

CPC classification number: H01M4/5825 ,  C01B25/45 ,  H01M10/0525 ,  H01M2004/021

Abstract: To simply manufacture a lithium-containing oxide at lower manufacturing cost. A method for manufacturing a lithium-containing composite oxide expressed by a general formula LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)). A solution containing Li and P is formed and then is dripped in a solution containing M (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) to form a mixed solution. By a hydrothermal method using the mixed solution, a single crystal particle of a lithium-containing composite oxide expressed by the general formula LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) is manufactured.

公开(公告)号：US08674371B2

公开(公告)日：2014-03-18

申请号：US13706589

申请日：2012-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/14

CPC classification number: H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

Abstract: The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

Abstract translation: 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。