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公开(公告)号：US10236303B2
公开(公告)日：2019-03-19
申请号：US14290216
申请日：2014-05-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L29/786 , H01L27/12 , G02F1/1368 , H01L29/66 , G02F1/1362
Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
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公开(公告)号：US11152397B2
公开(公告)日：2021-10-19
申请号：US16690804
申请日：2019-11-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L27/12 , H01L27/32 , G02F1/1362 , H01L27/02 , H01L29/786
Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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公开(公告)号：US10756080B2
公开(公告)日：2020-08-25
申请号：US16189396
申请日：2018-11-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L27/02 , H01L27/12 , G02F1/133 , G02F1/1345 , H01L29/786
Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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公开(公告)号：US10566649B2
公开(公告)日：2020-02-18
申请号：US15608439
申请日：2017-05-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Tomoya Futamura , Tamae Moriwaka , Takahiro Kawakami , Junpei Momo , Nobuhiro Inoue
Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing, composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.
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公开(公告)号：US10559598B2
公开(公告)日：2020-02-11
申请号：US14700562
申请日：2015-04-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L27/12 , H01L29/786 , G02F1/1362 , H01L27/02 , H01L27/32
Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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Patent Agency Ranking
公开(公告)号：US10254607B2
公开(公告)日：2019-04-09
申请号：US15915663
申请日：2018-03-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: G02F1/1362 , H01L27/02 , H01L27/12 , H01L33/00
Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
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7.发明授权公开(公告)号：US12300691B2
公开(公告)日：2025-05-13
申请号：US18101642
申请日：2023-01-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L27/02 , G02F1/133 , G02F1/1345 , H01L27/12 , H01L29/786
Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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公开(公告)号：US20200091202A1
公开(公告)日：2020-03-19
申请号：US16690804
申请日：2019-11-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L27/12 , H01L27/32 , G02F1/1362 , H01L27/02 , H01L29/786
Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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公开(公告)号：US10074646B2
公开(公告)日：2018-09-11
申请号：US15150744
申请日：2016-05-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L27/02 , G02F1/1368 , H01L27/12 , H01L29/786 , G02F1/1333 , G02F1/1339 , G02F1/1343 , H01L29/24 , G02F1/1362
CPC classification number: H01L27/0266 , G02F1/133305 , G02F1/1339 , G02F1/13394 , G02F1/134309 , G02F1/13624 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/247 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
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公开(公告)号：US09570470B2
公开(公告)日：2017-02-14
申请号：US14795602
申请日：2015-07-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC: H01L29/72 , H01L27/12 , H01L29/20 , H01L29/24 , H01L29/786
CPC classification number: H01L27/1225 , H01L27/124 , H01L27/1244 , H01L27/127 , H01L29/1054 , H01L29/20 , H01L29/24 , H01L29/7869
Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
Abstract translation: 需要包括具有适当结构和占用面积小的氧化物半导体，保护电路等的显示装置。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 在所述栅极绝缘层上方并与所述栅电极重叠的第一氧化物半导体层; 以及通过层叠导电层和第二氧化物半导体层而形成的第一布线层和第二布线层，并且其端部在第一氧化物半导体层上方并与栅电极重叠。 非线性元件的栅电极连接到扫描线或信号线，非线性元件的第一布线层或第二布线层直接连接到栅极电极层，以施加电位 栅电极。
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