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21.
公开(公告)号:US09324825B2
公开(公告)日:2016-04-26
申请号:US13917379
申请日:2013-06-13
Applicant: STMicroelectronics S.r.l.
Inventor: Corrado Accardi , Stella Loverso , Sebastiano Ravesi , Noemi Graziana Sparta
IPC: G01N27/403 , H01L29/66 , G01N27/414 , B01L3/00
CPC classification number: G01N27/414 , B01L3/502707 , H01L29/1606 , H01L29/66 , H01L29/66053
Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.
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公开(公告)号:US20130210218A1
公开(公告)日:2013-08-15
申请号:US13762819
申请日:2013-02-08
Applicant: STMicroelectronics S.r.l.
Inventor: Corrado Accardi , Stella Loverso , Sebastiano Ravesi , Noemi Graziana Sparta
IPC: H01L21/02
CPC classification number: H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , H01L51/00 , H01L51/003
Abstract: A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.
Abstract translation: 一种方法将石墨烯层从施主衬底转移到最终衬底上。 该方法包括:在施主衬底上提供金属层; 并在金属层上生长石墨烯层。 该方法还包括:在石墨烯层上层压干膜光致抗蚀剂; 将胶带层叠在干膜光刻胶上; 化学的。 蚀刻金属层,获得包括带,干膜光致抗蚀剂和石墨烯层的初始结构; 在最终基板上层压初始结构; 从而获得包括干膜光致抗蚀剂,石墨烯层和最终基底的中间结构; 去除干膜光刻胶; 并且获得包括具有转移的石墨烯层的最终基底的最终结构。
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