公开(公告)号：US20230099610A1

公开(公告)日：2023-03-30

申请号：US18061795

申请日：2022-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo ZANETTI ,  Simone RASCUNA' ,  Mario Giuseppe SAGGIO ,  Alfio GUARNERA ,  Leonardo FRAGAPANE ,  Cristina TRINGALI

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US20220246771A1

公开(公告)日：2022-08-04

申请号：US17592322

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Edoardo ZANETTI ,  Mario Giuseppe SAGGIO

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/66

Abstract: A vertical conduction electronic device is formed by a body of wide-bandgap semiconductor material having a first conductivity type and a surface, which defines a first direction and a second direction. The body has a drift region. The electronic device includes a plurality of superficial implanted regions having a second conductivity type, which extend in the drift region from the surface and delimit between them, in the drift region, at least one superficial portion facing the surface. At least one deep implanted region has the second conductivity type, and extends in the drift region, at a distance from the surface of the body. A metal region extends on the surface of the body, in Schottky contact with the superficial portion of the drift region.

公开(公告)号：US20220246770A1

公开(公告)日：2022-08-04

申请号：US17584185

申请日：2022-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Marco SANTORO

IPC: H01L29/872 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66

Abstract: A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.

公开(公告)号：US20220076955A1

公开(公告)日：2022-03-10

申请号：US17458102

申请日：2021-08-26

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Mario Giuseppe SAGGIO

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/66

Abstract: A manufacturing method of an anchorage element of a passivation layer, comprising: forming, in a semiconductor body made of SiC and at a distance from a top surface of the semiconductor body, a first implanted region having, along a first axis, a first maximum dimension; forming, in the semiconductor body, a second implanted region, which is superimposed to the first implanted region and has, along the first axis, a second maximum dimension smaller than the first maximum dimension; carrying out a process of thermal oxidation of the first implanted region and second implanted region to form an oxidized region; removing said oxidized region to form a cavity; and forming, on the top surface, the passivation layer protruding into the cavity to form said anchorage element fixing the passivation layer to the semiconductor body.

公开(公告)号：US20200303564A1

公开(公告)日：2020-09-24

申请号：US16825214

申请日：2020-03-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone RASCUNA' ,  Mario Giuseppe SAGGIO

IPC: H01L29/872 ,  H01L29/20 ,  H01L29/16 ,  H01L29/06 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66

Abstract: A merged-PN-Schottky, MPS, diode includes an N substrate, an N-drift layer, a P-doped region in the drift layer, an ohmic contact on the P-doped region, a plurality of cells within the P-doped region and being portions of the drift layer where the P-doped region is absent, an anode metallization on the ohmic contact and on said cells, to form junction-barrier contacts and Schottky contacts respectively. The P-doped region has a grid-shaped layout separating from one another each cell and defining, together with the cells, an active area of the MPS diode. Each cell has a same geometry among quadrangular, quadrangular with rounded corners and circular; and the ohmic contact extends at the doped region with continuity along the grid-shaped layout.