Abstract:
A microphone has a package, and an acoustic sensor, an under surface of which is fixed to an inner face of the package. The acoustic sensor has a substrate having a plurality of hollows penetrating the substrate from a top surface to an under surface, and a capacitor structure made by a movable electrode plate and a fixed electrode plate disposed above each of the hollows. A package sound hole is opened in the package in a position opposed to the under surface of the acoustic sensor. A dent which is communicated with each of the hollows and open below the under surface side of the substrate is formed below the under surface of the substrate. A height of the dent measured from the under surface of the substrate is equal to or less than half of a height of the hollow.
Abstract:
A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The protrusion and the pressure relief hole have a gap therebetween defining an airflow channel as a pressure relief channel.
Abstract:
Diaphragm 33 is provided on a top surface of silicon substrate 32, and plate unit 39 is fixed to the top surface of silicon substrate 32 so as to cover the movable electrode film with a gap. Plate unit 39 is made of an insulating material. Fixed electrode film 40 is formed on a bottom surface of plate unit 39, and diaphragm 33 and fixed electrode film 40 constitute a capacitor. In an area around plate unit 39, a whole outer peripheral edge of the top surface of silicon substrate 32 is exposed from plate unit 39. On the top surface of the substrate 32, insulating sheet 47 made of the insulating material is formed in a part of an area exposed from plate unit 39, and electrode pad 48 electrically connected to diaphragm 33 and electrode pad 49 electrically connected to fixed electrode film 40 are provided on a top surface of insulating sheet 47.
Abstract:
Diaphragm 33 is provided on a top surface of silicon substrate 32, and plate unit 39 is fixed to the top surface of silicon substrate 32 so as to cover the movable electrode film with a gap. Plate unit 39 is made of an insulating material. Fixed electrode film 40 is formed on a bottom surface of plate unit 39, and diaphragm 33 and fixed electrode film 40 constitute a capacitor. In an area around plate unit 39, a whole outer peripheral edge of the top surface of silicon substrate 32 is exposed from plate unit 39. On the top surface of the substrate 32, insulating sheet 47 made of the insulating material is formed in a part of an area exposed from plate unit 39, and electrode pad 48 electrically connected to diaphragm 33 and electrode pad 49 electrically connected to fixed electrode film 40 are provided on a top surface of insulating sheet 47.
Abstract:
An acoustic transducer has a substrate having a cavity that is open at a top of the substrate, a vibration electrode film provided above the substrate so as to cover the cavity, and a fixed electrode film provided a distance above the vibration electrode film. A gap is formed between an upper surface of the substrate and a lower surface of the vibration electrode film around the cavity. In the gap across which the upper surface of the substrate and the lower surface of the vibration electrode film face each other, a narrow portion of the gap that is narrower than another portion of the gap is disposed. The narrow portion of the gap extends linearly.
Abstract:
An acoustic transducer includes a slit having higher passage resistance than in conventional structures and having a lower rate of decrease in the passage resistance than in conventional structures when, for example, the vibration electrode plate warps. The acoustic transducer includes a stationary electrode plate, and a vibration electrode plate facing the stationary electrode plate with a space between the electrode plates. The vibration electrode plate includes a slit that allows sound to pass through. The vibration electrode plate includes a resistance increasing section including at least one pair of high-resistance surfaces that constitute side surfaces of the slit in a width direction thereof, and are thicker than a middle portion of the vibration electrode plate.
Abstract:
A capacitance type sensor has a semiconductor substrate having a vertically opened penetration hole, a movable electrode film arranged above the penetration hole such that a periphery portion opposes to a top surface of the semiconductor substrate with a gap provided, and a fixed electrode film arranged above the movable electrode film with a gap with respect to the movable electrode film. A concave portion having at least a part thereof formed by an inclined surface is provided in the top surface of the semiconductor substrate in a region of the top surface of the semiconductor substrate which overlaps the periphery portion of the movable electrode film.
Abstract:
An acoustic transducer has a vibrating film and a fixed film formed above an opening portion of a substrate, and at least a first sensing portion and a second sensing portion that detect sound waves using change in capacitance between a vibrating electrode provided in the vibrating film and a fixed electrode provided in the fixed film, convert the sound waves into electrical signals, and output the electrical signals. In the first sensing portion and the second sensing portion, the fixed film is used in common, and the vibrating electrode is divided into a first sensing region and a second sensing region that respectively correspond to the first sensing portion and the second sensing portion. In the first sensing portion, a protrusion portion that protrudes toward the vibrating electrode is provided on a region of the fixed film that opposes the first sensing region.
Abstract:
A sensor device has a substrate, a sensor section provided on an upper surface of the substrate, a circuit section provided on the upper surface of the substrate, a plurality of connection pads that electrically conduct with the sensor section or the circuit section, and a metal protective film covering at least a part of the circuit section from above.
Abstract:
A capacitance sensor has a substrate, a vibration electrode plate formed over an upper side of the substrate, a back plate formed over the upper side of the substrate to cover the vibration electrode plate, and a fixed electrode plate arranged on the back plate facing the vibration electrode plate. At least one of the vibration electrode plate and the fixed electrode plate is divided into a plurality of regions. A sensing unit configured by the vibration electrode plate and the fixed electrode plate is formed on each of the divided regions. An isolation portion that suppresses vibration from being propagated is formed on the back plate to partition the sensing units from each other.