公开(公告)号：US09188851B2

公开(公告)日：2015-11-17

申请号：US13829521

申请日：2013-03-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jun Hyuk Woo ,  Min Kang ,  Bong-Yeon Kim ,  Jeong Won Kim ,  Jin Ho Ju ,  Tae Gyun Kim ,  Chul Won Park ,  Hyun Joo Lee

IPC: G03F9/00 ,  G03F1/00

CPC classification number: G03F1/00 ,  G03F1/30 ,  H01L21/0274 ,  H01L27/1288

Abstract: A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 μm to about 10.8 μm.

Abstract translation: 用于图案化薄膜的图案掩模包括具有形成在其上的多个凹槽的透明或半透明衬底，其间距为约4.6μm至约10.8μm。

公开(公告)号：US20150234286A1

公开(公告)日：2015-08-20

申请号：US14444255

申请日：2014-07-28

Applicant: Samsung Display Co., Ltd.

Inventor： Yong Son ,  Min Kang ,  Bong-Yeon Kim ,  Dong-Eon Lee ,  Hyun-joo Lee

IPC: G03F7/40 ,  G03F7/16

CPC classification number: G03F7/2016 ,  G03F7/70375

Abstract: A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask.

Abstract translation: 形成精细图案的方法包括在基板上形成蚀刻目标材料层，在蚀刻靶材料层上形成第一光致抗蚀剂层，在第一光致抗蚀剂层上形成金属图案，金属图案具有多条线，薄 膜线交替布置，线具有预定的线宽和厚度并且彼此隔开预定距离，通过光照射激发金属图案中的表面等离子体激元，以产生表面等离子体共振，其在第一 光致抗蚀剂层，通过去除金属图案和显影第一光致抗蚀剂层形成第一光致抗蚀剂图案，并且通过使用第一光致抗蚀剂图案作为掩模来蚀刻蚀刻目标材料层。

公开(公告)号：US20150064857A1

公开(公告)日：2015-03-05

申请号：US14224284

申请日：2014-03-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： MIN KANG ,  Hyunjoo Lee ,  Bong-Yeon Kim ,  DongEon Lee ,  Yong Son ,  Junhyuk Woo ,  Jinho Ju

IPC: G03F1/26 ,  H01L21/033 ,  H01L27/12

CPC classification number: G03F1/26 ,  G03F1/32 ,  H01L27/1288

Abstract: A mask for etching a target layer includes a mask substrate. A phase inversion layer is disposed to correspond to a non-etched area of a pattern target layer. The phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of a pattern target layer. An inversion offset part is disposed in a center part of the phase inversion layer. The inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area.

Abstract translation: 用于蚀刻目标层的掩模包括掩模基板。 相位反转层设置成对应于图案目标层的未蚀刻区域。 相位反转层被配置为通过反射入射光的相位并将反射的光传输到图案目标层的未蚀刻区域来产生反相光。 反转偏移部分设置在相位反转层的中心部分。 反转偏移部分被配置为产生偏移光，其对非蚀刻区域中的反射光产生相消干涉并且向非蚀刻区域提供偏移光。