公开(公告)号：US10580902B2

公开(公告)日：2020-03-03

申请号：US15691207

申请日：2017-08-30

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun Lim ,  Joon Seok Park ,  Jay Bum Kim ,  Jun Hyung Lim ,  Kyoung Seok Son

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/423

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

公开(公告)号：US09825066B2

公开(公告)日：2017-11-21

申请号：US14990383

申请日：2016-01-07

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Myung-Kwan Ryu ,  Eok-Su Kim ,  Kyoung Seok Son ,  Seung-Ha Choi ,  Sho-Yeon Kim ,  Hyun Kim ,  Eun-Hye Park ,  Byung-Hwan Chu

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.

公开(公告)号：US20160211281A1

公开(公告)日：2016-07-21

申请号：US14990383

申请日：2016-01-07

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Myung-Kwan Ryu ,  Eok-Su Kim ,  Kyoung Seok Son ,  Seung-Ha Choi ,  Sho-Yeon Kim ,  Hyun Kim ,  Eun-Hye Park ,  Byung-Hwan Chu

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括栅电极，与栅电极重叠的沟道层，与沟道层重叠的源极，与沟道层重叠的漏电极和源极，以及设置在源电极和漏极之间的间隔物 。