公开(公告)号：US20160042959A1

公开(公告)日：2016-02-11

申请号：US14597563

申请日：2015-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Yoonho KHANG ,  Myounghwa KIM ,  Joonhwa BAE ,  Myounggeun CHA

IPC: H01L21/285 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Abstract translation: 薄膜晶体管包括在基板上的多晶硅层，其包括第二和第三区域之间的第一区域。 在基板上形成多晶硅层，在第一和第三区域的多晶硅层上形成源电极和漏电极。 源电极和漏电极中的每一个包括与多晶硅层相邻的金属硅化物层。

公开(公告)号：US20160013323A1

公开(公告)日：2016-01-14

申请号：US14565880

申请日：2014-12-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee JEONG ,  Yoonho KHANG ,  Myounghwa KIM ,  Youngki SHIN ,  Kyoungwon LEE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78603 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film transistor substrate includes a substrate, an anodized aluminum layer on the substrate, a polycrystalline silicon layer covering the anodized aluminum layer, and an insulating layer covering the polycrystalline silicon layer.

Abstract translation: 薄膜晶体管衬底包括衬底，衬底上的阳极氧化铝层，覆盖阳极化铝层的多晶硅层和覆盖多晶硅层的绝缘层。