SEMICONDUCTOR RESISTOR STRUCTURE AND METHOD FOR MAKING

    公开(公告)号:US20180190753A1

    公开(公告)日:2018-07-05

    申请号:US15419002

    申请日:2017-01-30

    摘要: Disclosed examples include a resistor comprising a semiconductor structure having a length dimension with first and second ends spaced from one another and an intermediate region between the first and second ends, first and second metal-semiconductor compound structures on the semiconductor structure proximate the first and second ends of the semiconductor structure, the first and second metal-semiconductor compound structures being spaced apart from each other along the length dimension of the semiconductor structure, and at least one intermediate metal-semiconductor compound structure on a portion of the intermediate region of the semiconductor structure between the first and second ends, the intermediate metal-semiconductor compound structure being spaced apart from the first and second metal-semiconductor compound structures on the semiconductor structure.