公开(公告)号：US20210288114A1

公开(公告)日：2021-09-16

申请号：US17333749

申请日：2021-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Sung Young YUN ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

公开(公告)号：US20200152703A1

公开(公告)日：2020-05-14

申请号：US16524626

申请日：2019-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae PARK ,  Chul Joon HEO ,  Sung Young YUN ,  Gae Hwang LEE ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00

Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

公开(公告)号：US20190245009A1

公开(公告)日：2019-08-08

申请号：US16265264

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L27/28

CPC classification number: H01L27/307 ,  H01L27/281 ,  H01L27/286

Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

公开(公告)号：US20180269258A1

公开(公告)日：2018-09-20

申请号：US15986956

申请日：2018-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Sung Young YUN ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L51/42

CPC classification number: H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/4253 ,  H01L51/441 ,  Y02E10/549

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

公开(公告)号：US20170287971A1

公开(公告)日：2017-10-05

申请号：US15283698

申请日：2016-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Kyu Sik Kim ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14636

Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

公开(公告)号：US20170213973A1

公开(公告)日：2017-07-27

申请号：US15482017

申请日：2017-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Young YUN ,  Gae Hwang LEE ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Yong Wan JIN ,  Tadao YAGI

IPC: H01L51/00

CPC classification number: H01L51/006 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/008 ,  H01L51/0094 ,  H01L51/4253 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor compound and an n-type semiconductor compound, and the organic photoelectric device satisfies Equation 1, and has external quantum efficiency (EQE) of greater than or equal to about 40% at −3 V.

公开(公告)号：US20170125485A1

公开(公告)日：2017-05-04

申请号：US15374550

申请日：2016-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Kwang Hee Lee ,  Dong-Seok LEEM ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L27/146

CPC classification number: H01L27/307 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14647 ,  H01L51/441

Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.

公开(公告)号：US20160064455A1

公开(公告)日：2016-03-03

申请号：US14646000

申请日：2015-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok LEEM ,  Kwang Hee LEE ,  Sung Young YUN ,  Gae Hwang LEE ,  Xavier BULLIARD ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L51/44 ,  H01L51/00

CPC classification number: H01L27/307 ,  H01L51/0073 ,  H01L51/008 ,  H01L51/4253 ,  H01L2251/308 ,  Y02E10/549

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by Chemical Formula 1.

Abstract translation: 有机光电子器件包括彼此面对的第一电极和第二电极，以及在第一电极和第二电极之间的有源层，所述有源层包括p型半导体和n型半导体的异质结，p 型半导体，其包含由化学式1表示的化合物。

公开(公告)号：US20220280044A1

公开(公告)日：2022-09-08

申请号：US17519974

申请日：2021-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Youngjun YUN ,  Hyun Bum KANG ,  Jong Won CHUNG

IPC: A61B5/00 ,  G02B5/20 ,  G02F1/17 ,  G16H30/40

Abstract: A bio imaging system includes a substrate, a light source on the substrate, and a sensor on the substrate, wherein at least one of the light source or the sensor is configured to emit or absorb light of different wavelength spectrum. The bio imaging system is configured to combine a plurality of images obtained based on the light of different wavelength spectra to obtain a three-dimensional image of an internal tissue of a living body.

公开(公告)号：US20210257420A1

公开(公告)日：2021-08-19

申请号：US17227845

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae PARK ,  Sung Young YUN ,  Gae Hwang LEE ,  Yong Wan JIN ,  Chul Joon HEO

IPC: H01L27/32 ,  H01L31/105

Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.