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    Electronic device including 5G antenna module
    21.
    发明授权
    Electronic device including 5G antenna module 有权

    公开(公告)号：US12081246B2

    公开(公告)日：2024-09-03

    申请号：US17268753

    申请日：2019-09-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaehyung Kim ,  Jinkyu Bang ,  Jaebong Chun

    IPC: H04B1/00 ,  H01Q1/22 ,  H01Q1/24 ,  H01Q21/20 ,  H04B1/40 ,  H04M1/02

    CPC classification number: H04B1/0067 ,  H01Q1/2283 ,  H01Q1/243 ,  H01Q21/20 ,  H04B1/40 ,  H04M1/026

    Abstract: An electronic device may include a first PCB including a non-conductive region and a conductive region operating as a ground, a first wireless communication circuit disposed on the first PCB, and a 5th generation (5G) antenna module disposed adjacent to the first PCB. The 5G antenna module may include at least one second PCB including an antenna array and a conductive layer operating as a ground of the antenna array and a second wireless communication circuit electrically connected to the antenna array. The second PCB may include a first portion and a second portion having a predetermined angle with the first portion. The first portion may be disposed adjacent to the non-conductive region and at least part of the second portion may be disposed adjacent to the conductive region. The first wireless communication circuit may be electrically connected to a first point of the conductive layer included in the first portion and transmitting or receiving a first RF signal in a first frequency band by using the conductive region and at least part of the conductive layer. The second wireless communication circuit may transmit or receive a second RF signal in a second frequency band by using the antenna array. Besides, various embodiments as understood from the specification are also possible.

    ELECTRONIC DEVICE INCLUDING MULTI-FEED ANTENNA
    23.
    发明公开
    ELECTRONIC DEVICE INCLUDING MULTI-FEED ANTENNA 审中-公开

    公开(公告)号：US20240079780A1

    公开(公告)日：2024-03-07

    申请号：US18380979

    申请日：2023-10-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hongpyo BAE ,  Minkyung LEE ,  Kyungmoon Seol ,  Jaehyung Kim ,  Gyubok Park

    IPC: H01Q5/35 ,  H01Q1/24 ,  H01Q23/00

    CPC classification number: H01Q5/35 ,  H01Q1/243 ,  H01Q23/00

    Abstract: An electronic device includes: a first housing; a second housing movably coupled to the first housing, the second housing being configured to slide with respect to the first housing along a first direction and a second direction that is opposite to the first direction; a display including a first area and a second area, the first area being disposed on the second housing, the second area extending from the first area, the second area being configured to (i) be exposed to an outside environment as the second housing moves in the first direction and (ii) be rolled into the first housing as the second housing moves in the second direction; and at least one processor configured to communicate with an external electronic device and to receive and/or transmit a communication signal by feeding to a first conductive portion and/or a second conductive portion.

    SEMICONDUCTOR MEMORY DEVICES HAVING STACKED STRUCTURES THEREIN THAT SUPPORT HIGH INTEGRATION
    24.
    发明公开
    SEMICONDUCTOR MEMORY DEVICES HAVING STACKED STRUCTURES THEREIN THAT SUPPORT HIGH INTEGRATION 审中-公开

    公开(公告)号：US20230328990A1

    公开(公告)日：2023-10-12

    申请号：US18333886

    申请日：2023-06-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangjae Lee ,  Jaehyung Kim ,  Dongseog Eun

    IPC: H10B43/27 ,  H10B43/35 ,  H10B43/40

    CPC classification number: H10B43/27 ,  H10B43/40 ,  H10B43/35

    Abstract: A semiconductor device includes an upper stack structure extending on a lower stack structure, which extends on an underlying substrate. A channel structure extends through the upper stack structure and the lower stack structure. The lower stack structure includes a first lower electrode layer disposed adjacent to an interface between the lower stack structure and the upper stack structure, and a second lower electrode layer disposed adjacent a center of the lower stack structure. The upper stack structure includes a first upper electrode layer disposed adjacent to the interface, and a second upper electrode layer disposed adjacent a center of the upper stack structure. At least one of the first lower electrode layer and the first upper electrode layer is thicker than the second lower electrode layer. At least one insulating layer is disposed between the first lower electrode layer and the first upper electrode layer.

    SEMICONDUCTOR MEMORY DEVICES HAVING STACKED STRUCTURES THEREIN THAT SUPPORT HIGH INTEGRATION
    26.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES HAVING STACKED STRUCTURES THEREIN THAT SUPPORT HIGH INTEGRATION 有权

    公开(公告)号：US20210242235A1

    公开(公告)日：2021-08-05

    申请号：US16985024

    申请日：2020-08-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangjae Lee ,  Jaehyung Kim ,  Dongseog Eun

    IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11573

    Abstract: A semiconductor device includes an upper stack structure extending on a lower stack structure, which extends on an underlying substrate. A channel structure extends through the upper stack structure and the lower stack structure. The lower stack structure includes a first lower electrode layer disposed adjacent to an interface between the lower stack structure and the upper stack structure, and a second lower electrode layer disposed adjacent a center of the lower stack structure. The upper stack structure includes a first upper electrode layer disposed adjacent to the interface, and a second upper electrode layer disposed adjacent a center of the upper stack structure. At least one of the first lower electrode layer and the first upper electrode layer is thicker than the second lower electrode layer. At least one insulating layer is disposed between the first lower electrode layer and the first upper electrode layer.

    Electronic device using metal cover as antenna radiator
    27.
    发明授权
    Electronic device using metal cover as antenna radiator 有权

    公开(公告)号：US10483626B2

    公开(公告)日：2019-11-19

    申请号：US16287054

    申请日：2019-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaehyung Kim ,  Jinu Kim ,  Jesun Moon

    IPC: H01Q1/48 ,  H01Q1/24 ,  H04M1/02 ,  H01Q1/44 ,  G06F1/16

    Abstract: An electronic device is provided. The electronic device includes a housing including a front plate and a back plate facing away from the front plate, a display positioned within the housing and exposed through the front plate, and a printed circuit board (PCB) interposed between the front plate and the back plate. The back plate includes a first conductive part having a quadrangular cutting elongated from a corner in the second direction, when viewed from above the back plate, a second conductive part positioned in the cutting, when viewed from above the back plate, and an insulating part of an L shape elongated between the first conductive part and the second conductive part, when viewed from above the back plate, and contacting the first conductive part and the second conductive part.

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