公开(公告)号：US20230021042A1

公开(公告)日：2023-01-19

申请号：US17747991

申请日：2022-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soodol PARK ,  Joonhyung KIM ,  Munseong KWON ,  Jaewoo PARK ,  Hyolim HEO

IPC: F04C15/00 ,  F04C2/12

Abstract: A horizontal type rotary compressor includes a case including an inlet and an outlet and configured to store oil, a compressor having a compression space in which refrigerant is accommodated, a driver to drive the compressor, a rotating shaft to connect the driver and the compressor, an oil feed pipe disposed at a side of the compressor, a first plate configured to divide the case into a first area for the driver and a second area for the compressor. The first plate including a discharge hole through which compressed refrigerant is discharged from the compressor to the first area. A second plate dividing the case into the second area and a third area in which the oil feed pipe communicates with the outlet, and includes a second hole formed at the upper side to communicate the second and third areas. The first and second plates forming an oil flow path.

公开(公告)号：US20220404852A1

公开(公告)日：2022-12-22

申请号：US17577201

申请日：2022-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woochul JUNG ,  Myoungbo KWAK ,  Jaewoo PARK ,  Eunseok SHIN ,  Junhan CHOI

IPC: G05F1/575 ,  G11C5/14 ,  G11C8/18 ,  G11C8/10

Abstract: A voltage regulator and a semiconductor memory device having the same are disclosed. The voltage regulator includes an amplifier configured to amplify a difference between a reference voltage and a feedback voltage to generate an amplifier output voltage, a voltage feedback unit connected between an output supply voltage generation node and a ground voltage and configured to generate the feedback voltage, a first transfer gate unit connected between an input supply voltage and the voltage generation node and driven in response to the amplifier output voltage to provide first current, a current load replica unit connected between the voltage generation node and the ground voltage and configured to consume the first current, and a transfer unit connected between the input supply voltage and the voltage generation node and driven in response to the amplifier output voltage when the current load unit performs an operation, to provide second current.

公开(公告)号：US20220123967A1

公开(公告)日：2022-04-21

申请号：US17563406

申请日：2021-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewoo PARK ,  Youngdon CHOI ,  Junghwan CHOI ,  Changsik YOO

IPC: H04L25/02 ,  H04L25/49 ,  H04L25/14

Abstract: Provided are a memory device and a memory system including the same. The memory device may include a data bus inversion (DBI) mode selector configured to select a first multi-bit DBI signal from among a plurality of multi-bit DBI signals respectively corresponding to a plurality of DBI modes according to multi-bit data; a multi-mode DBI encoder configured to generate encoded multi-bit data by DBI encoding the multi-bit data according to the first multi-bit DBI signal; and a transceiver configured to transmit a data symbol corresponding to the encoded multi-bit data through a data channel and transmit a DBI symbol corresponding to the first multi-bit DBI signal through a DBI channel.

公开(公告)号：US20220059139A1

公开(公告)日：2022-02-24

申请号：US17323009

申请日：2021-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyoung PARK ,  Jaewoo PARK ,  Younghoon SON ,  Youngdon CHOI ,  Junghwan CHOI

IPC: G11C5/14 ,  H04L25/49 ,  H04L25/02 ,  G11C11/56 ,  G11C7/10

Abstract: A method of generating a multi-level signal having one of three or more voltage levels that are different from each other, the method including: performing a first voltage setting operation in which first and second voltage intervals are adjusted to be different from each other, wherein the first voltage interval represents a difference between a first pair of adjacent voltage levels and the second voltage interval represents a difference between a second pair of adjacent voltage levels; performing a second voltage setting operation in which a voltage swing width is adjusted, the voltage swing width representing a difference between a lowest and a highest voltage level among the three or more voltage levels; and generating an output data signal that is the multi-level signal based on input data including two or more bits, a result of the first voltage setting operation and a result of the second voltage setting operation.

公开(公告)号：US20210377080A1

公开(公告)日：2021-12-02

申请号：US17156813

申请日：2021-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewoo PARK ,  Youngdon CHOI ,  Junghwan CHOI ,  Changsik YOO

IPC: H04L25/02 ,  H04L25/49 ,  H04L25/14

Abstract: Provided are a memory device and a memory system including the same. The memory device may include a data bus inversion (DBI) mode selector configured to select a first multi-bit DBI signal from among a plurality of multi-bit DBI signals respectively corresponding to a plurality of DBI modes according to multi-bit data; a multi-mode DBI encoder configured to generate encoded multi-bit data by DBI encoding the multi-bit data according to the first multi-bit DBI signal; and a transceiver configured to transmit a data symbol corresponding to the encoded multi-bit data through a data channel and transmit a DBI symbol corresponding to the first multi-bit DBI signal through a DBI channel.

公开(公告)号：US20210363994A1

公开(公告)日：2021-11-25

申请号：US17269668

申请日：2019-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jahyun NAM ,  Jaewoo PARK ,  Duhwa JUNG

IPC: F04C29/06 ,  F04C18/063

Abstract: The disclosure relates to a compressor having a noise reduction resonator. The compressor includes: a compression part having compression space in which introduced gas is accommodated, and configured to compress and discharge the gas in the compression space; and a gas moving part having an inner wall forming a gas flow path through which the gas discharged from the compression space moves, wherein the gas moving part is provided with a first resonator configured to communicate with the gas flow path on the inner wall forming the gas flow path and having a resonance space depressed upward in a moving direction of the gas. The compressor according to the disclosure may prevent compression efficiency from decreasing and maintain a noise reduction effect for a long period of time by preventing foreign objects or liquids from being accumulated in the resonance space.