公开(公告)号：US11264386B2

公开(公告)日：2022-03-01

申请号：US17038435

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HeonJong Shin ,  Sunghun Jung ,  Minchan Gwak ,  Yongsik Jeong ,  Sangwon Jee ,  Sora You ,  Doohyun Lee

IPC: H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  H01L23/522 ,  H01L21/768 ,  H01L23/485 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US11177362B2

公开(公告)日：2021-11-16

申请号：US16829372

申请日：2020-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun Lee ,  Heonjong Shin ,  Minchan Gwak ,  Hyunho Park ,  Sunghun Jung ,  Yongsik Jeong ,  Sangwon Jee ,  Inchan Hwang

IPC: H01L29/45 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device including: a substrate that includes a first active region and a second active region; a first source/drain pattern on the first active region; a second source/drain pattern on the second active region; a separation dielectric pattern on the substrate between the first source/drain pattern and the second source/drain pattern; and a first contact pattern on the first source/drain pattern, wherein the first contact pattern includes: a first metal pattern; a first barrier pattern between the first metal pattern and the first source/drain pattern; and a second barrier pattern between the first barrier pattern and the first source/drain pattern, wherein the first barrier pattern contacts the separation dielectric pattern and extends along a sidewall of the first metal pattern adjacent to the separation dielectric pattern.