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    CLEANER
    23.
    发明公开
    CLEANER 审中-公开

    公开(公告)号：US20230329495A1

    公开(公告)日：2023-10-19

    申请号：US18342225

    申请日：2023-06-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongjin CHO ,  Ohkyu KWON ,  Youngjun CHO ,  Seongtae CHU ,  Hyeonwoo TAK

    IPC: A47L9/10 ,  A47L9/16 ,  A47L9/24

    CPC classification number: A47L9/106 ,  A47L9/1608 ,  A47L9/1683 ,  A47L9/248 ,  A47L9/165 ,  A47L5/30

    Abstract: A cleaner is provided. The cleaner includes a housing, a filtering member provided to form a dust collecting chamber inside the housing, and a main body configured to be moved relative to the housing. The main body includes a dirt removal member configured to be moved on the dust collecting chamber, an opening and closing device configured to open and close the dust collecting chamber and provided to interlock with the dirt removal member, and a connecting frame configured to connect the dirt removal member and the opening and closing device, the connecting frame including a guide rib provided to prevent rubbish, which is contained in air flowing into the dust collecting chamber, from rotating in the dust collecting chamber.

    SENSORS AND ELECTRONIC DEVICES
    25.
    发明申请
    SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20220013585A1

    公开(公告)日：2022-01-13

    申请号：US17485737

    申请日：2021-09-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  Hyesung CHOI ,  Ohkyu KWON ,  Changki KIM ,  Hwang Suk KIM ,  Bum Woo PARK ,  Jae Jun LEE

    IPC: H01L27/30 ,  H01L27/146 ,  H01L51/42 ,  H01L51/50

    Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

    SENSORS AND ELECTRONIC DEVICES
    28.
    发明申请
    SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210036061A1

    公开(公告)日：2021-02-04

    申请号：US16788857

    申请日：2020-02-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  Hyesung CHOI ,  Ohkyu KWON ,  Changki KIM ,  Hwang Suk KIM ,  Bum Woo PARK ,  Jae Jun LEE

    IPC: H01L27/30 ,  H01L51/42

    Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

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