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    Substrate processing apparatus
    24.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US10522370B2

    公开(公告)日：2019-12-31

    申请号：US15481686

    申请日：2017-04-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Hyun Park ,  Kazuya Ono ,  Jung Jae Kim

    IPC: H01L21/67 ,  G03F7/20 ,  B08B1/04 ,  B08B3/02

    Abstract: A substrate processing apparatus includes a substrate stage that supports a substrate, a follower stage disposed on a same plane as the substrate stage, a first driving unit that moves the follower stage in parallel with a first direction, and a second driving unit that moves the substrate stage in parallel with the first direction. The second driving unit includes a voice magnet member disposed on the substrate stage, and a voice coil member disposed on the follower stage and spaced apart from the voice magnet member.

    Measuring system and measuring method
    26.
    发明授权
    Measuring system and measuring method 有权

    公开(公告)号：US09874435B2

    公开(公告)日：2018-01-23

    申请号：US14667930

    申请日：2015-03-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangwook Park ,  Sang-Hyun Park ,  Taekyu Son ,  Sangdon Jang

    IPC: G01B11/14 ,  G01B9/02

    CPC classification number: G01B11/14 ,  G01B9/02016

    Abstract: Measuring systems and methods using the same may be provided. For example, the measuring system including a first reference member located at one of a first target member and a second target member, the first and second target members being configured to make a relative movement with respect to each other and the first reference member having a first length, a second reference member located at the other of the first target member and the second target member and having a second length, and a measuring unit located at a distance from the first reference member and the second reference member, the measuring unit configured to measure a relative location of one of the first reference member and the second reference member with respect to the other may be provided.

    Maintaining height of alignment key in semiconductor devices
    30.
    发明授权
    Maintaining height of alignment key in semiconductor devices 有权

    公开(公告)号：US11189572B2

    公开(公告)日：2021-11-30

    申请号：US16383816

    申请日：2019-04-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung-Tae Lee ,  Seung-Hoon Choi ,  Min-Chan Gwak ,  Ja-Eung Koo ,  Sang-Hyun Park

    IPC: H01L23/544 ,  H01L29/78 ,  H01L29/417 ,  H01L29/51 ,  H01L29/423

    Abstract: A semiconductor device may include a gate electrode structure on a first region of a substrate including the first region and a second region, a capping structure covering an upper surface of the gate electrode structure, the capping structure including a capping pattern and a first etch stop pattern covering a lower surface and a sidewall of the capping pattern, an alignment key on the second region of the substrate, the alignment key including an insulating material, and a filling structure on the second region of the substrate, the filling structure covering a sidewall of the alignment key, and including a first filling pattern, a second filling pattern covering a lower surface and a sidewall of the first filling pattern and a second etch stop pattern covering a lower surface and a sidewall of the second filling pattern.

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