公开(公告)号：US08530967B2

公开(公告)日：2013-09-10

申请号：US13463181

申请日：2012-05-03

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: H01L29/739

CPC classification number: H01L29/41741 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/7395

Abstract: A lateral insulated-gate bipolar transistor includes a buried insulation layer which opens only part of the collector ion implantation region and isolates the other regions, thereby reducing the loss by the turn-off time. The lateral insulated-gate bipolar transistor further includes a deep ion implantation region formed to face towards the open part of the collector ion implantation region, thereby decreasing the hole current injected into a base region under an emitter ion implantation region, and thereby greatly increasing the latch-up current level by relatively increasing the hole current injected into the deep ion implantation region having no latch-up effect.

Abstract translation: 横向绝缘栅双极晶体管包括仅开放集电极离子注入区域的一部分并隔离其它区域的掩埋绝缘层，从而通过关断时间减少损耗。 横向绝缘栅双极晶体管还包括形成为朝向集电极离子注入区域的开放部分形成的深离子注入区域，从而减少注入到发射极离子注入区域下方的基极区域中的空穴电流，从而大大增加 通过相对增加注入到没有闭锁效应的深离子注入区域中的空穴电流来闭锁电流水平。

公开(公告)号：US08488236B2

公开(公告)日：2013-07-16

申请号：US13375784

申请日：2010-11-10

Applicant: Geon Hee Kim ,  Sun Choel Yang ,  Ki Soo Chang ,  Hyo Sik Kim ,  Sang Hyeok Kim ,  Sang Yong Lee

Inventor： Geon Hee Kim ,  Sun Choel Yang ,  Ki Soo Chang ,  Hyo Sik Kim ,  Sang Hyeok Kim ,  Sang Yong Lee

IPC: G02B13/14 ,  G02B21/02

CPC classification number: G02B13/14 ,  G02B21/0008 ,  G02B21/0016 ,  G02B21/02 ,  G02B23/12

Abstract: Provided is an optical system for a thermal image microscope. The optical system includes an image forming unit and a relay unit. The image forming unit forms a focus. The relay unit elongates an optical path. Here, the image forming unit includes six lenses. The relay unit includes two lenses. Aspherical surfaces of the lenses are all convex surfaces.

Abstract translation: 提供了一种用于热像显微镜的光学系统。 光学系统包括图像形成单元和中继单元。 图像形成单元形成焦点。 中继单元延长光路。 这里，图像形成单元包括六个透镜。 中继单元包括两个透镜。 透镜的非球面表面均为凸面。

公开(公告)号：US20120075693A1

公开(公告)日：2012-03-29

申请号：US13375784

申请日：2010-11-10

Applicant: Geon Hee Kim ,  Sun Choel Yang ,  Ki Soo Chang ,  Hyo Sik Kim ,  Sang Hyeok Kim ,  Sang Yong Lee

Inventor： Geon Hee Kim ,  Sun Choel Yang ,  Ki Soo Chang ,  Hyo Sik Kim ,  Sang Hyeok Kim ,  Sang Yong Lee

IPC: G02B21/00

CPC classification number: G02B13/14 ,  G02B21/0008 ,  G02B21/0016 ,  G02B21/02 ,  G02B23/12

Abstract: Provided is an optical system for a thermal image microscope. The optical system includes an image forming unit and a relay unit. The image forming unit forms a focus. The relay unit elongates an optical path. Here, the image forming unit includes six lenses. The relay unit includes two lenses. Aspherical surfaces of the lenses are all convex surfaces.

Abstract translation: 提供了一种用于热像显微镜的光学系统。 光学系统包括图像形成单元和中继单元。 图像形成单元形成焦点。 中继单元延长光路。 这里，图像形成单元包括六个透镜。 中继单元包括两个透镜。 透镜的非球面都是凸面。

公开(公告)号：US20110058066A1

公开(公告)日：2011-03-10

申请号：US12948415

申请日：2010-11-17

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: H04N5/235

CPC classification number: G03B7/006

Abstract: An automatic exposure (AE) controlling device and method are provided. According to the method, an electric shutter (ES) value and an analog gain control (AGC) value can be calculated through a proportional integral control method according to a brightness value of an inputted image frame. Then, AE compensation on a present image frame can be performed using the calculated ES value and AGC value.

Abstract translation: 提供自动曝光（AE）控制装置和方法。 根据该方法，可以通过比例积分控制方法根据输入图像帧的亮度值来计算电动快门（ES）值和模拟增益控制（AGC）值。 然后，可以使用计算的ES值和AGC值来执行当前图像帧的AE补偿。

公开(公告)号：US07859577B2

公开(公告)日：2010-12-28

申请号：US11861818

申请日：2007-09-26

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: G05B13/02 ,  H04N5/235 ,  H04N3/14 ,  H04N5/335

CPC classification number: G03B7/006

Abstract: An automatic exposure (AE) controlling device and method are provided. According to the method, an electric shutter (ES) value and an analog gain control (AGC) value can be calculated through a proportional integral control method according to a brightness value of an inputted image frame. Then, AE compensation on a present image frame can be performed using the calculated ES value and AGC value.

Abstract translation: 提供自动曝光（AE）控制装置和方法。 根据该方法，可以通过比例积分控制方法根据输入图像帧的亮度值来计算电动快门（ES）值和模拟增益控制（AGC）值。 然后，可以使用计算的ES值和AGC值来执行当前图像帧的AE补偿。

公开(公告)号：US07812918B2

公开(公告)日：2010-10-12

申请号：US12003586

申请日：2007-12-28

Applicant: Young Seok Choi ,  Yu Ho Jung ,  Sang Yong Lee

Inventor： Young Seok Choi ,  Yu Ho Jung ,  Sang Yong Lee

IPC: G02F1/1339

CPC classification number: G02F1/13394 ,  G02F1/133371 ,  G02F1/134363 ,  G02F1/136286

Abstract: A liquid crystal display device includes first and second substrates facing each other; gate lines and data lines formed on the first substrate such that the gate lines and the data lines intersect each other to define pixel regions; thin film transistors formed at respective intersections of the gate lines and the data lines; a black matrix layer formed on the second substrate such that the black matrix layer corresponds to a region other than the pixel regions; color filter layers extending in an extension direction of the data lines in respective pixel regions; a liquid crystal layer interposed between the first and second substrates; first column spacers formed on one of the first and second substrates such that each first column spacer corresponds to an associated one. of the gate lines or to a channel region of an associated one of the thin film transistors.

Abstract translation: 液晶显示装置包括彼此面对的第一和第二基板; 栅极线和数据线形成在第一基板上，使得栅极线和数据线彼此相交以限定像素区域; 形成在栅极线和数据线的各交叉处的薄膜晶体管; 形成在所述第二基板上的黑矩阵层，使得所述黑矩阵层对应于除所述像素区域之外的区域; 彩色滤光片层，沿各个像素区域中的数据线的延伸方向延伸; 介于所述第一和第二基板之间的液晶层; 第一列间隔件形成在第一和第二基板中的一个上，使得每个第一列间隔件对应于相关联的一个。 的栅极线或相关联的一个薄膜晶体管的沟道区。

公开(公告)号：US20090057710A1

公开(公告)日：2009-03-05

申请号：US12199966

申请日：2008-08-28

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: H01L21/331 ,  H01L29/739

CPC classification number: H01L29/7394 ,  H01L29/66325

Abstract: An insulated gate bipolar transistor according to an embodiment includes a first conductive type collector ion implantation area in a substrate; a second conductive type buffer layer, including a first segment buffer layer and a second segment buffer layer, on the first conductive collector ion implantation area; a first conductive type base area on the second conductive type buffer layer; a gate on the substrate at a side of the first conductive type base area; a second conductive type emitter ion implantation area in the first conductive type base area; an insulating layer on the gate; an emitter electrode electrically connected to the second conductive type emitter ion implantation area; and a collector electrode electrically connected to the first conductive collector ion implantation area. The first segment buffer layer can be aligned below a portion of the base area and can have a lower density of second conductive type ions than that of the second segment buffer layer adjacent the first segment buffer layer.

Abstract translation: 根据实施例的绝缘栅双极晶体管包括在衬底中的第一导电类型集电极离子注入区; 在所述第一导电集电极离子注入区上的第二导电型缓冲层，包括第一段缓冲层和第二段缓冲层; 第二导电型缓冲层上的第一导电类型基区; 位于第一导电型基底区一侧的基板上的栅极; 在第一导电类型基区中的第二导电型发射体离子注入区; 栅极上的绝缘层; 电连接到第二导电型发射体离子注入区的发射极; 以及电连接到第一导电集电体离子注入区的集电极。 第一段缓冲层可以在底部区域的一部分下方对准，并且可以具有比与第一段缓冲层相邻的第二段缓冲层的密度更低的第二导电类型离子的密度。

公开(公告)号：US07348282B2

公开(公告)日：2008-03-25

申请号：US11024849

申请日：2004-12-30

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: H01L21/31

CPC classification number: H01L21/823462 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A method of forming a gate insulating layer and nitrogen density measuring method thereof, by which a transistor having enhanced electric characteristics can be fabricated without employing separate ion implantation in a manner of providing parameters for enhancing perfection of the transistor via nitridation measurement. The method includes forming a first oxide layer on a silicon substrate having first to fourth regions defined thereon, patterning the first oxide layer in the first and fourth regions to have a predetermined thickness, and forming a nitride layer on the oxide layer in the third and fourth regions.

Abstract translation: 一种形成栅极绝缘层的方法和氮浓度测量方法，通过这种方法可以制造具有增强的电特性的晶体管，而不需要采用单独的离子注入，以提供通过氮化测量增强晶体管完整性的参数。 该方法包括在硅衬底上形成第一氧化物层，其上定义有第一至第四区域，将第一和第四区域中的第一氧化物层图形化以具有预定厚度，以及在第三区域的氧化物层上形成氮化物层 第四区。

公开(公告)号：USD478709S1

公开(公告)日：2003-08-26

申请号：US29161862

申请日：2002-06-04

Applicant: Sang Yong Lee

Designer： Sang Yong Lee

公开(公告)号：US20150204698A1

公开(公告)日：2015-07-23

申请号：US14414574

申请日：2013-07-08

Applicant: Sang Yong LEE

Inventor： Sang Yong Lee

IPC: G01D9/02 ,  G01D5/14 ,  G01D5/26 ,  H03M7/12

CPC classification number: G01D9/02 ,  G01D5/14 ,  G01D5/2454 ,  G01D5/26 ,  H03M7/12

Abstract: The present invention relates to a programmable location control encoder, wherein the encoder has a new function of combining a sequential control function to conventional rotary encoders. The present invention comprises: a rotary disk having an absolute location code indicative of each location, that is, an address code formed by a combination of binary numbers; an optical sensor for detecting said binary address code; a signal amplification unit for amplifying an output signal of the optical sensor; and a control circuit board for outputting a digital signal by using a signal outputted from the signal amplification unit. According to the present invention, it is possible to convert a partition angle or a location control code by configuring a software resolution, and to maximize work efficiency by combining a sequential control function to conventional rotary encoders.

Abstract translation: 本发明涉及一种可编程位置控制编码器，其中编码器具有将顺序控制功能与常规旋转编码器组合的新功能。 本发明包括：具有表示每个位置的绝对位置代码的旋转盘，即由二进制数的组合形成的地址码; 用于检测所述二进制地址码的光学传感器; 信号放大单元，用于放大光学传感器的输出信号; 以及控制电路板，用于通过使用从信号放大单元输出的信号输出数字信号。 根据本发明，可以通过配置软件分辨率来转换分配角度或位置控制代码，并且通过将顺序控制功能组合到常规旋转编码器来最大化工作效率。