公开(公告)号：US09508592B2

公开(公告)日：2016-11-29

申请号：US14922556

申请日：2015-10-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takahiro Iguchi

IPC: H01L21/336 ,  H01L21/768 ,  H01L23/532 ,  H01L29/786 ,  H01L51/00 ,  H01L29/45 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1333 ,  G02F1/1362

CPC classification number: H01L21/76829 ,  G02F1/133345 ,  G02F1/136204 ,  G02F2001/136295 ,  G02F2201/50 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/3272 ,  H01L29/458 ,  H01L29/786 ,  H01L29/7869 ,  H01L51/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed.