公开(公告)号：US08299881B2

公开(公告)日：2012-10-30

申请号：US12907497

申请日：2010-10-19

申请人： Gun Woo Moon ,  Tae Won Heo ,  Chong Eun Kim ,  Ki Bum Park ,  Don Sik Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Dong Wook Lee ,  Dong Joong Kim

发明人： Gun Woo Moon ,  Tae Won Heo ,  Chong Eun Kim ,  Ki Bum Park ,  Don Sik Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Dong Wook Lee ,  Dong Joong Kim

IPC分类号： H01F27/28

CPC分类号： H01F38/08

摘要： There is provided a transformer improved in leakage inductance including: a core having first, second and third legs electromagnetically coupled to one another; a primary winding formed of a conductor having one end and another end receiving power from the outside and dividedly wound around the first, second and third legs; and a secondary winding wound around at least one of the first, second and third legs and receiving induced power by electromagnetic induction with the primary winding.

摘要翻译： 提供了一种改进了漏电感的变压器，包括：具有彼此电磁耦合的第一，第二和第三支脚的芯体; 由具有一端的导体形成的初级绕组，而另一端从外部接收功率并且分别缠绕在第一，第二和第三支腿上; 以及绕第一，第二和第三腿中的至少一个缠绕的次级绕组，并且通过与初级绕组的电磁感应接收感应功率。

公开(公告)号：US08098500B2

公开(公告)日：2012-01-17

申请号：US12234245

申请日：2008-09-19

申请人： Tae Won Heo ,  Gun Woo Moon ,  Woo Jin Lee ,  Ki Bum Park ,  Don Sik Kim ,  Chong Eun Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Hak Ryong Kim ,  Dong Joong Kim

发明人： Tae Won Heo ,  Gun Woo Moon ,  Woo Jin Lee ,  Ki Bum Park ,  Don Sik Kim ,  Chong Eun Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Hak Ryong Kim ,  Dong Joong Kim

IPC分类号： H02M3/335 ,  H02M3/18

CPC分类号： H02M3/33592 ,  H02M3/337 ,  H02M2007/4818 ,  H02M2007/53878 ,  Y02B70/1441 ,  Y02B70/1475

摘要： A phase shift full bridge converter with a reduced current stress includes: a switching unit that switches an input voltage; a transformer that includes a first capacitor serially connected to, and having a primary side and a secondary side; an auxiliary circuit unit that includes a first switch, a second switch, and a second capacitor, which are connected in parallel to the secondary side of the transformer; and a rectification unit that is connected to the auxiliary circuit unit, with an output inductor being removed.

摘要翻译： 具有减小的电流应力的相移全桥转换器包括：切换输入电压的开关单元; 变压器，其包括串联连接到第一电容器并且具有初级侧和次级侧的第一电容器; 辅助电路单元，其包括与变压器的次级侧并联连接的第一开关，第二开关和第二电容器; 以及整流单元，其连接到辅助电路单元，其中输出电感器被去除。

公开(公告)号：US07674716B2

公开(公告)日：2010-03-09

申请号：US11319071

申请日：2005-12-28

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的佐剂，其在阳离子充电材料上形成吸附层，以增加阴离子充电材料对阳离子电荷材料的抛光选择性，其中佐剂 包括聚电解质盐，其包含：（a）重均分子量为1,000〜20,000的接枝型聚电解质，其包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US20090168476A1

公开(公告)日：2009-07-02

申请号：US12188707

申请日：2008-08-08

申请人： Gun Woo MOON ,  Dong Wook Lee ,  Kyu Min Cho ,  Seong Wook Choi ,  Don Sik Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Dong Joong Kim ,  Tae Won Heo

发明人： Gun Woo MOON ,  Dong Wook Lee ,  Kyu Min Cho ,  Seong Wook Choi ,  Don Sik Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Dong Joong Kim ,  Tae Won Heo

IPC分类号： H02M7/217

CPC分类号： H02M1/4225 ,  Y02B70/126 ,  Y02P80/112

摘要： There is provided a bridgeless power factor correction circuit that corrects a power factor by complementarily switching two switches according to phase of input power without using rectifier bridge diodes. A bridgeless power factor correction circuit according to an aspect of the invention may include: a switching unit having a plurality of switches and alternately switching input AC power; a stabilizing unit rectifying and smoothing the power switched by the switching unit; and a control unit controlling an alternate switching operation between the plurality of switches according to phases of the input power.

摘要翻译： 提供了一种无桥功率因数校正电路，通过根据输入功率的相位互补地切换两个开关来校正功率因数，而不使用整流桥二极管。 根据本发明的一个方面的无桥功率因数校正电路可以包括：具有多个开关并交替地切换输入AC电力的开关单元; 稳定单元对由切换单元切换的功率进行整流和平滑; 以及控制单元，根据输入功率的相位来控制多个开关之间的交替切换操作。

公开(公告)号：US09401360B2

公开(公告)日：2016-07-26

申请号：US14859764

申请日：2015-09-21

申请人： Jong Pil Kim ,  Woncheol Jeong

发明人： Jong Pil Kim ,  Woncheol Jeong

IPC分类号： H01L29/49 ,  H01L27/092 ,  H01L21/8238 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L23/528 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device may include a substrate including an NMOS region and a PMOS region. A gate structure can include a gate pattern and a spacer pattern, where the gate structure is on the substrate. A first etching stop film can be on the substrate in the NMOS region and a second etching stop film can be on the substrate in the PMOS region. A contact hole can penetrate the first and second etching stop films and a contact plug can be in the contact hole. A thickness of the first etching stop film can be greater than a thickness of the second etching stop film. Related methods are also disclosed.

公开(公告)号：US08094473B2

公开(公告)日：2012-01-10

申请号：US12188707

申请日：2008-08-08

申请人： Gun Woo Moon ,  Dong Wook Lee ,  Kyu Min Cho ,  Seong Wook Choi ,  Don Sik Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Dong Joong Kim ,  Tae Won Heo

发明人： Gun Woo Moon ,  Dong Wook Lee ,  Kyu Min Cho ,  Seong Wook Choi ,  Don Sik Kim ,  Jong Pil Kim ,  Sang Cheol Bong ,  Dong Joong Kim ,  Tae Won Heo

IPC分类号： H02M7/04

CPC分类号： H02M1/4225 ,  Y02B70/126 ,  Y02P80/112

摘要： There is provided a bridgeless power factor correction circuit that corrects a power factor by complementarily switching two switches according to phase of input power without using rectifier bridge diodes. A bridgeless power factor correction circuit according to an aspect of the invention may include: a switching unit having a plurality of switches and alternately switching input AC power; a stabilizing unit rectifying and smoothing the power switched by the switching unit; and a control unit controlling an alternate switching operation between the plurality of switches according to phases of the input power.

摘要翻译： 提供了一种无桥功率因数校正电路，通过根据输入功率的相位互补地切换两个开关来校正功率因数，而不使用整流桥二极管。 根据本发明的一个方面的无桥功率因数校正电路可以包括：具有多个开关并交替地切换输入AC电力的开关单元; 稳定单元对由切换单元切换的功率进行整流和平滑; 以及控制单元，根据输入功率的相位来控制多个开关之间的交替切换操作。

公开(公告)号：US07915109B2

公开(公告)日：2011-03-29

申请号：US11957575

申请日：2007-12-17

申请人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

发明人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/0847 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/78

摘要： A method of manufacturing a probe includes: forming a first slant face of the probe through an anisotropic etching process using a first etching mask pattern formed on a silicon substrate; forming a first semiconductor electrode region; forming a second etching mask pattern in an opposite direction of the first etching mask pattern on the silicon substrate; forming a spacer layer on a side wall of the second etching mask pattern; forming a second slant face of the probe; forming a second semiconductor electrode region; forming a silicon oxide layer pattern on the resulting silicon substrate; forming spacer layers on both side walls of the silicon oxide layer pattern; and etching the silicon substrate to a predetermined depth.

摘要翻译： 探针的制造方法包括：使用形成在硅衬底上的第一蚀刻掩模图案，通过各向异性蚀刻工艺形成探针的第一倾斜面; 形成第一半导体电极区域; 在所述硅衬底上与所述第一蚀刻掩模图案的相反方向形成第二蚀刻掩模图案; 在所述第二蚀刻掩模图案的侧壁上形成间隔层; 形成探针的第二倾斜面; 形成第二半导体电极区域; 在所得硅衬底上形成氧化硅层图案; 在氧化硅层图案的两个侧壁上形成间隔层; 并将硅衬底蚀刻到预定深度。

公开(公告)号：US07700393B2

公开(公告)日：2010-04-20

申请号：US12043982

申请日：2008-03-07

申请人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

发明人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L29/7834 ,  B82Y10/00 ,  G11B9/1409 ,  H01L21/28123 ,  H01L29/66636

摘要： A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.

摘要翻译： 提供一种制造增强型半导体探针的方法和具有该增强型半导体探针的信息存储装置。 该方法包括使用各向异性湿蚀刻和侧壁，其中降低了工艺参数对器件性能的影响，以提高器件在批量生产中的可靠性，并且去除降低测量灵敏度的因素以提高性能 的设备。

公开(公告)号：US20090231884A1

公开(公告)日：2009-09-17

申请号：US12113648

申请日：2008-05-01

申请人： Sang Cheol BONG ,  Tae Young Ahn ,  Don Sik Kim ,  Hak Ryong Kim ,  Myung Hyun Sung ,  Do Heung Na ,  Jong Pil Kim ,  Dong Joong Kim ,  Tae Won Heo ,  Dong Wook Lee

发明人： Sang Cheol BONG ,  Tae Young Ahn ,  Don Sik Kim ,  Hak Ryong Kim ,  Myung Hyun Sung ,  Do Heung Na ,  Jong Pil Kim ,  Dong Joong Kim ,  Tae Won Heo ,  Dong Wook Lee

IPC分类号： H02M3/335

CPC分类号： H02M3/33576 ,  H02M3/28

摘要： In accordance with the present invention, the switching power supply device using a current sharing transformer includes an inverter switching unit for switching an input voltage; a share inductor for classification connected to the inverter switching unit for distributing a current applied by the inverter switching unit; first and second transformers of which each primary side connected to the share inductor for classification is connected in parallel to each other; and a rectifying unit connected to secondary sides of the first and second transformers.

摘要翻译： 根据本发明，使用电流共享变压器的开关电源装置包括用于切换输入电压的逆变器切换单元; 用于分级的共用电感器，连接到逆变器开关单元，用于分配由逆变器开关单元施加的电流; 连接到用于分类的共用电感器的每个初级侧的第一和第二变压器彼此并联连接; 以及与所述第一和第二变压器的次级侧连接的整流单元。

公开(公告)号：US20080220556A1

公开(公告)日：2008-09-11

申请号：US12043982

申请日：2008-03-07

申请人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

发明人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

IPC分类号： H01L21/02

CPC分类号： H01L29/7834 ,  B82Y10/00 ,  G11B9/1409 ,  H01L21/28123 ,  H01L29/66636

摘要： A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.

摘要翻译： 提供一种制造增强型半导体探针的方法和具有该增强型半导体探针的信息存储装置。 该方法包括使用各向异性湿蚀刻和侧壁，其中降低了工艺参数对器件性能的影响，以提高器件在批量生产中的可靠性，并且去除降低测量灵敏度的因素以提高性能 的设备。