摘要:
[Problem to be Solved]To provide a belt for shoe-press of paper machine having water drain grooves which is usable for long time by preventing occurrence of cracks in side walls of the water drain grooves. [Solving Means]The surface condition of the water drain grooves side wall is arranged to be pear-skin state having minute unevenness, preferably to have an average surface roughness in a range of 10 to 50 micrometers in at least upper two thirds of the total distance (depth) of side wall of the water drain grooves between the top of a groove and a bottom thereof. The water drain grooves having such roughness can be manufactured in the following arrangement. A rotary cutting blades are disposed in a position contacting with a roll around which a belt is wound, the roll and the rotary cutting blades rotate simultaneously and a groove cutting device is shifted in the width direction of a belt so that water drain grooves are formed in the belt, in which the belt running speed on the roll is set at 2 to 20 m/min, preferably 5 to 15 m/min, rotation speed of the rotary cutting blades is set at 1,000 to 8,000 rpm, preferably 3,000 to 6,000 rpm, and thus grooves can be manufactured.
摘要:
To provide a shoe press belt that is more excellent in the properties such as abrasion resistance, bending fatigue, crack resistance, and compression fatigue resistance. The shoe press belt has polyurethane and a substrate, wherein the polyurethane contains a non-reactive polydimethylsiloxane liquid substance and has a JIS A hardness of 93° to 96°.
摘要:
A papermaking machine belt has a polyurethane and a substrate. The polyurethane is obtained by curing a mixture of an urethane prepolymer, a curing agent, and a non-reactive liquid poly(dimethyl siloxane) in which an amount ratio thereof with respect to a sum of the amount of the urethane prepolymer and the curing agent is from 0.5 to 25% by weight.
摘要:
The temporary compacting of the powder for use in sintering is carried out, the temporary sintering is carried out, the main compacting is carried out, the main sintering is carried out, and the thickness of the radius direction of the base part of the cam before the heat-treatment is set to 3.0 mm or more.
摘要:
A manufacturing method of a semiconductor memory device includes the steps of selectively forming a field oxide film and a gate oxide film on a semiconductor substrate, depositing a first conductive layer on an entire surface of the resultant structure, selectively etching the first conductive layer located in a region other than an element region, depositing a second conductive layer on an entire surface of the resultant structure, and etching the first conductive layer and the second conductive layer using the same mask to form a plurality of floating gates by the first conductive layer and to form a plurality of control gates by the second conductive layer, wherein the step of selectively etching the first conductive layer includes the first etching step of forming cell slits for separating the plurality of floating gates from each other and the second etching step of forming removed regions each of which includes only one end of each of the plurality of control gates.