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    MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND INITIALIZING METHOD
    22.
    发明申请
    MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND INITIALIZING METHOD 有权
    磁记忆元件，磁记忆和初始化方法

    公开(公告)号：US20120278582A1

    公开(公告)日：2012-11-01

    申请号：US13504071

    申请日：2010-10-21

    申请人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    发明人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    IPC分类号： G06F12/00 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  G11C19/0808 ,  G11C2013/0083 ,  H01L27/228

    摘要： A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.

    摘要翻译： 磁存储元件包括：第一磁化自由层; 非磁性层; 参考层; 第一磁化固定层组; 和第一阻挡层。 第一磁化自由层由具有垂直磁各向异性的铁磁材料组成，并且包括第一磁化固定区域，第二磁化固定区域和无磁化区域。 非磁性层设置在第一磁化自由层附近。 参考层由铁磁材料组成并设置在非磁性层上。 第一磁化固定层组设置在第一磁化固定区附近。 第一阻挡层被设置在第一磁化固定层组和第一磁化固定区之间或第一磁化固定层组中。

    Magnetic random access memory and initializing method for the same
    23.
    发明授权
    Magnetic random access memory and initializing method for the same 有权
    磁性随机存取存储器和初始化方法相同

    公开(公告)号：US08174873B2

    公开(公告)日：2012-05-08

    申请号：US12863740

    申请日：2008-12-10

    申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Norikazu Ohshima ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

    发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Norikazu Ohshima ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

    摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer 10 has: a first magnetization region 11 connected to one of the pair of terminals; a second magnetization region 12 connected to the other of the pair of terminals; and a magnetization switching region 13 connecting between the first magnetization region 11 and the second magnetization region 12 and having reversible magnetization. A first pinning site PS1, by which the domain wall is trapped, is formed at a boundary between the first magnetization region 11 and the magnetization switching region 13. A second pinning site PS2, by which the domain wall is trapped, is formed at a boundary between the second magnetization region 12 and the magnetization switching region 13. A third pinning site PS3, by which the domain wall is trapped, is formed within the first magnetization region 11.

    摘要翻译： 畴壁运动型MRAM具有：具有垂直磁各向异性的磁记录层10; 以及用于向磁记录层10提供电流的一对端子51和52.磁记录层10具有：连接到该对端子之一的第一磁化区域11; 连接到所述一对端子中的另一个的第二磁化区域12; 以及连接在第一磁化区域11和第二磁化区域12之间并具有可逆磁化强度的磁化开关区域13。 在第一磁化区域11和磁化转换区域13之间的边界处形成第一钉住位置PS1（通过该区域壁被捕获）。在第一磁化区域11和磁化转换区域13之间的边界处形成第二钉扎位置PS1 第二磁化区域12和磁化转换区域13之间的边界。在第一磁化区域11内形成有第三钉扎位置PS3，畴壁被捕获。

    Magnetoresistive element, and magnetic random access memory
    24.
    发明授权
    Magnetoresistive element, and magnetic random access memory 有权
    磁阻元件和磁性随机存取存储器

    公开(公告)号：US08174086B2

    公开(公告)日：2012-05-08

    申请号：US12739990

    申请日：2008-10-28

    申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima

    发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

    摘要： A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.

    摘要翻译： 磁阻元件设置有第一磁化自由层; 第二磁化自由层; 邻近所述第二磁化自由层设置的非磁性层; 以及在所述第二磁化自由层的相对侧上邻近所述第二磁化自由层设置的第一磁化固定层。 第一磁化自由层由铁磁材料形成，并且在厚度方向上具有磁各向异性。 另一方面，第二磁化自由层和第一磁化固定层由铁磁材料形成，并且在面内方向上具有磁各向异性。 第一磁化自由层包括：具有固定磁化强度的第一磁化固定区; 具有固定磁化强度的第二磁化固定区域; 以及与第一和第二磁化固定区域连接并具有可逆磁化强度的无磁化区域。 磁化自由区​​和第二磁化自由层磁耦合。 此外，无磁化区域的质心和第二磁化自由层的质心在特定的面内方向上移位。

    Magnetic random access memory
    25.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08159872B2

    公开(公告)日：2012-04-17

    申请号：US12865197

    申请日：2009-01-09

    申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    IPC分类号： G11C11/15

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  Y10S977/933 ,  Y10S977/935

    摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.

    摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化固定层，第一磁化自由层，夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层，第二磁化固定层，第二磁化自由层和第二非磁性层 层夹在第二磁化固定层和第二磁化自由层之间。 第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，第二磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层和第二磁化自由层彼此磁耦合。 第二磁化自由层的中心在与第一磁化自由层的平行于每个层的平面中的第一方向上位移。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第三磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第三磁化固定层和第三磁化自由层之间的第三非磁性层。 第三磁化固定层和第三磁化自由层具有面内磁各向异性。

    Magnetic random access memory
    26.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08149615B2

    公开(公告)日：2012-04-03

    申请号：US12865194

    申请日：2009-01-09

    申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222

    摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has: first and second magnetization fixed regions; and a magnetization free region. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer.

    摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化自由层，第一磁化固定层，第二磁化自由层和夹在第一磁化固定层和第二磁化自由层之间的第一非磁性层。 第一磁化自由层具有：第一和第二磁化固定区域; 和无磁化区域。 磁化自由区​​和第二磁化自由层彼此磁耦合。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第二磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第二磁化固定层和第三磁化自由层之间的第二非磁性层。

    MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT
    28.
    发明申请
    MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT 有权
    磁阻元件MRAM和磁化元件的初始化方法

    公开(公告)号：US20110188298A1

    公开(公告)日：2011-08-04

    申请号：US13062764

    申请日：2009-10-16

    申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    IPC分类号： G11C11/00 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

    摘要： A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.

    摘要翻译： 磁阻元件具有：作为铁磁层的磁化记录层。 磁化记录层包括：具有可逆磁化强度的磁化反转区域; 第一磁化固定区域，其连接到所述磁化反转区域的第一边界并且具有沿第一方向固定的磁化方向; 以及连接到所述磁化反转区域的第二边界并且具有沿第二方向固定的磁化方向的第二磁化固定区域。 对于第二磁化固定区域的一部分，提供了至少一个磁化反转促进结构，其是磁化反转比剩余部分更容易的结构。