公开(公告)号：US20170359035A1

公开(公告)日：2017-12-14

申请号：US15620171

申请日：2017-06-12

Applicant: Texas Instruments Incorporated

Inventor： Shagun DUSAD ,  Rajendrakumar JOISH

IPC: H03F3/00 ,  H03M1/12 ,  H04B1/40 ,  G11C27/02

CPC classification number: H04B1/40 ,  G11C27/026 ,  H03F3/193 ,  H03F3/45188 ,  H03F3/505 ,  H03F2200/451 ,  H03F2203/45514 ,  H03F2203/45551 ,  H03F2203/5024 ,  H03M1/1245

Abstract: The disclosure provides a circuit. The circuit includes a gain stage block. The gain stage block is coupled to an input voltage through a first switch. A first capacitor is coupled between the first switch and a ground terminal. A second capacitor is coupled between the first switch and a second switch. A third switch is coupled between the second capacitor and a fixed terminal of the gain stage block.

公开(公告)号：US20160315630A1

公开(公告)日：2016-10-27

申请号：US15136368

申请日：2016-04-22

Applicant: Texas Instruments Incorporated

Inventor： Gehesh EDAKKUTTATHIL MUHAMMED ,  Naveen KV ,  Arun MOHAN ,  Shagun DUSAD

IPC: H03M1/12

CPC classification number: H03M1/12 ,  H01G4/30 ,  H01G4/38 ,  H01G4/385 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/90 ,  H03M1/804

Abstract: The disclosure provides a capacitor array. The capacitor array includes one or more first metal plates vertically stacked parallel to each other. A second metal plate is horizontally stacked to couple one end of each first metal plate of the one or more first metal plates. One or more third metal plates are vertically stacked parallel to the one or more first metal plates. Each third metal plate of the one or more third metal plates is stacked between two first metal plates.

Abstract translation: 本公开提供了一种电容器阵列。 电容器阵列包括彼此垂直堆叠的一个或多个第一金属板。 水平堆叠的第二金属板将一个或多个第一金属板的每个第一金属板的一端连接。 一个或多个第三金属板垂直堆叠成平行于一个或多个第一金属板。 一个或多个第三金属板的每个第三金属板堆叠在两个第一金属板之间。