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公开(公告)号：US20210215760A1
公开(公告)日：2021-07-15
申请号：US16743541
申请日：2020-01-15
Inventor： Donald McMenemy , John Kaminski , Shailesh N. Joshi , Ali M. Bazzi , Krishna Pattipati
IPC: G01R31/3183 , G06N3/02 , G01R31/52
Abstract: Systems and methods of testing the health of vehicular power devices are disclosed herein. A method may include producing operating points as a function of cycling current (Ids) and voltage drain to source (Vds) when a subject device is conducting current. The method may further include determining a mean of moving distribution to adapt a center of the moving distribution contrasted with a plurality of known healthy devices. The method may also include indicating an imminent fault in the subject device based upon a discontinuity among operating points above a threshold.
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22.发明申请公开(公告)号：US20210104970A1
公开(公告)日：2021-04-08
申请号：US16906523
申请日：2020-06-19
Inventor： Shohei Suenaga , Shailesh N. Joshi , Danny J. Lohan , Yanghe Liu
Abstract: An integrated power control assembly mounted on an axial end of a three-phase motor includes a substrate, two input busbars each of positive and negative polarities alternatively spaced apart on the substrate, a plurality of sets of paired devices, and three output busbars corresponding to the three phases of the motor, wherein a set of paired devices includes a switching semiconductor and a diode. An inner input busbar has edges adjacent to an inner input busbar of opposite polarity and an outer input busbar of opposite polarity and configured to have at least twice as many devices as the outer input busbars. One or more sets of paired devices are disposed axially on outer input busbars and on inner input busbars along the edges. An individual output busbar is disposed over and electrically coupled to one or more sets of paired devices disposed on adjacent input busbars of opposite polarity.
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公开(公告)号：US20210063088A1
公开(公告)日：2021-03-04
申请号：US16560230
申请日：2019-09-04
Inventor： Shailesh N. Joshi , Srivathsan Sudhaker
IPC: F28B1/02 , H01L23/427 , F28F3/02
Abstract: A cooling system that includes an expandable vapor chamber having a condenser side opposite an evaporator side, a condenser side wick coupled to a condenser side wall, an evaporator side wick coupled to an evaporator side wall, and a vapor core positioned between the evaporator side wick and the condenser side wick. The cooling system also includes a vapor pressure sensor communicatively coupled to a controller and a bellow actuator disposed in the vapor core and communicatively coupled to the controller. The bellow actuator is expandable based on a vapor pressure measurement of the vapor pressure sensor.
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公开(公告)号：US10892206B2
公开(公告)日：2021-01-12
申请号：US16250743
申请日：2019-01-17
Inventor： Shailesh N. Joshi
IPC: H01L23/373 , C23C28/02 , H01L23/488
Abstract: A method of forming a bonding assembly that includes positioning a plurality of polymer spheres against an opal structure and placing a substrate against a second major surface of the opal structure. The opal structure includes the first major surface and the second major surface with a plurality of voids defined therebetween. The plurality of polymer spheres encapsulates a solder material disposed therein and contacts the first major surface of the opal structure. The method includes depositing a material within the voids of the opal structure and removing the opal structure to form an inverse opal structure between the first and second major surfaces. The method further includes removing the plurality of polymer spheres to expose the solder material encapsulated therein and placing a semiconductor device onto the inverse opal structure in contact with the solder material.
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公开(公告)号：US10804236B2
公开(公告)日：2020-10-13
申请号：US16170432
申请日：2018-10-25
Inventor： Shailesh N. Joshi , Naoya Take
IPC: H01L23/00 , H01L23/373 , H05K7/20
Abstract: An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.
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Patent Agency Ranking
公开(公告)号：US10746477B2
公开(公告)日：2020-08-18
申请号：US15288327
申请日：2016-10-07
Inventor： Feng Zhou , Yanghe Liu , Ercan Mehmet Dede , Shailesh N. Joshi
Abstract: Systems and methods for degassing and charging phase-change thermal devices are disclosed. In one embodiment, a system includes a flask, a first shut-off valve fluidly coupled to an outlet of the flask, and a first valve fluidly coupled to the first shut-off valve by a fluid line. The system further includes a second valve fluidly coupled to the first valve, wherein the second valve is operable to be fluidly coupled to the phase-change thermal device, a second shut-off valve fluidly coupled to the second valve, a third valve fluidly coupled to the first valve, a vacuum pump fluidly coupled to the third valve, and a fluid injection device fluidly coupled to the fluid line between the first valve and the first shut-off valve. The fluid injection device draws the working fluid from the flask and injects a desired amount into the phase-change thermal device.
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27.发明申请公开(公告)号：US20200245500A1
公开(公告)日：2020-07-30
申请号：US16256599
申请日：2019-01-24
Inventor： Shailesh N. Joshi , Naoya Take
IPC: H05K7/20 , H01L23/367 , H01L23/473
Abstract: The present disclosure generally relates to a stack including cooling tubes embedded within a solder, and methods of forming the same. A method of forming a stack includes placing a first amount of bond layer precursor material on a substrate, placing one or more cooling tubes on the first amount of bond layer precursor material, the one or more cooling tubes having a ceramic tube wall electroplated with a metal, placing a second amount of bond layer precursor material on the one or more cooling tubes such that the one or more cooling tubes are surrounded by bond layer precursor material placing an assembly having the one or more heat generating devices on the second amount of bond layer precursor material, and performing a bonding process to form a bond layer between the assembly and the substrate with the one or more cooling tubes disposed in the bond layer.
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28.发明申请公开(公告)号：US20200219792A1
公开(公告)日：2020-07-09
申请号：US16243751
申请日：2019-01-09
Applicant: Toyota Motor Engineering & Manufacturing North America, Inc. , The Board of Trustees of the University of Illinois
Inventor： Shailesh N. Joshi , Naoya Take , Paul Braun , Julia Kohanek , Gaurav Singhal
IPC: H01L23/473 , H01L21/683 , H01L21/48
Abstract: Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.
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公开(公告)号：US20200161217A1
公开(公告)日：2020-05-21
申请号：US16196780
申请日：2018-11-20
Inventor： Shailesh N. Joshi , Naoya Take
IPC: H01L23/473 , H01L23/498 , H01L21/48
Abstract: Embodiments described herein generally relate to an electronics assembly that includes a semiconductor device, a substrate layer, a first mesh layer and a second mesh layer. Jet channels that have a first inner diameter are disposed within the substrate layer. The first mesh layer includes a first plurality of pores that have a perimeter opening. The second mesh layer includes a second plurality of pores that have a second inner diameter. The jet channels, the first and the second plurality of pores are concentric to create a fluid path for a fluid to impinge a first device surface of the semiconductor device. The second inner diameter is smaller than the perimeter opening and the first inner diameter of the substrate layer such that a cooling fluid velocity increases when flowing from the substrate layer through the second mesh layer.
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公开(公告)号：US20200135681A1
公开(公告)日：2020-04-30
申请号：US16170432
申请日：2018-10-25
Inventor： Shailesh N. Joshi , Naoya Take
IPC: H01L23/00 , H01L23/373 , H05K7/20
Abstract: An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.
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