公开(公告)号：US11508902B2

公开(公告)日：2022-11-22

申请号：US17194107

申请日：2021-03-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Yi Heng Tsai ,  Fu-Chun Huang ,  Ching-Hui Lin ,  Chun-Ren Cheng

IPC: H01L41/27 ,  B81B7/02 ,  B06B1/02 ,  B06B1/06 ,  B81C3/00 ,  H01L41/113 ,  H01L41/29

Abstract: A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

公开(公告)号：US10944041B1

公开(公告)日：2021-03-09

申请号：US16573833

申请日：2019-09-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Yi Heng Tsai ,  Fu-Chun Huang ,  Ching-Hui Lin ,  Chun-Ren Cheng

IPC: H01L41/27 ,  H01L41/113 ,  B81B7/02 ,  B06B1/02 ,  B06B1/06 ,  B81C3/00 ,  H01L41/29

Abstract: A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

公开(公告)号：US20170067890A1

公开(公告)日：2017-03-09

申请号：US15356503

申请日：2016-11-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Yi-Hsien Chang ,  Shih-Fen Huang

IPC: G01N33/543 ,  G01N27/414

CPC classification number: G01N33/54373 ,  G01N27/4145 ,  G01N27/4148 ,  H01L51/0093 ,  H01L51/0512

Abstract: Dual-gate ion-sensitive field effect transistor (ISFET) and methods implementing the dual-gate ISFETs for disease diagnostics are disclosed herein. An exemplary method includes providing a biological sample to a dual-gate ISFET. The dual-gate ISFET includes a fluidic gate structure and a gate structure, where the fluidic gate structure and the gate structure are disposed over opposite surfaces of a device substrate. The method further includes generating enzymatic reactions from enzyme-modified detection mechanisms. The enzyme-modified detection mechanisms release ions into an electrolyte solution of the fluidic gate structure. The method further includes biasing the fluidic gate structure and the gate structure to generate an electrical signal as a sensing layer of the fluidic gate structure reacts with the ions. The electrical signal indicates an ion concentration in the electrolyte solution that correlates with a presence or a quantity of target analytes in the biological sample.

Abstract translation: 本文公开了双栅离子敏感场效应晶体管（ISFET）和实现用于疾病诊断的双栅极ISFET的方法。 一种示例性方法包括向双栅极ISFET提供生物样品。 双栅极ISFET包括流体栅极结构和栅极结构，其中流体栅极结构和栅极结构设置在器件衬底的相对表面上。 该方法还包括从酶修饰的检测机制产生酶反应。 酶修饰的检测机制将离子释放到流体门结构的电解质溶液中。 该方法还包括偏压流体栅极结构和栅极结构以在流体栅极结构的感测层与离子反应时产生电信号。 电信号表示与生物样品中目标分析物的存在或数量相关的电解质溶液中的离子浓度。