公开(公告)号：US08101489B2

公开(公告)日：2012-01-24

申请号：US12021062

申请日：2008-01-28

申请人： Shau-Lin Shue ,  Ting-Chu Ko

发明人： Shau-Lin Shue ,  Ting-Chu Ko

IPC分类号： H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device is disclosed. First, a semiconductor substrate having a doped region(s) is provided. Thereafter, a pre-amorphous implantation process and neutral (or non-neutral) species implantation process is performed over the doped region(s) of the semiconductor substrate. Subsequently, a silicide is formed in the doped region(s). By conducting a pre-amorphous implantation combined with a neutral species implantation, the present invention reduces the contact resistance, such as at the contact area silicide and source/drain substrate interface.

摘要翻译： 公开了一种制造半导体器件的方法。 首先，提供具有掺杂区域的半导体衬底。 此后，在半导体衬底的掺杂区域上执行预非晶体注入工艺和中性（或非中性）物质注入工艺。 随后，在掺杂区域中形成硅化物。 通过进行与中性物质注入组合的预非晶注入，本发明降低了接触电阻，例如在接触面积硅化物和源极/漏极衬底界面处。

公开(公告)号：US20130015581A1

公开(公告)日：2013-01-17

申请号：US13182368

申请日：2011-07-13

申请人： Hsingjen Wann ,  Ting-Chu Ko

发明人： Hsingjen Wann ,  Ting-Chu Ko

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76844 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an integrated circuit structure. The integrated circuit structure includes a substrate having an IC device formed therein; a first dielectric material layer disposed on the substrate and having a first trench formed therein; and a first composite interconnect feature disposed in the first trench and electrically coupled with the IC device. The first composite interconnect feature includes a first barrier layer disposed on sidewalls of the first trench; a first metal layer disposed on the first barrier layer; and a first graphene layer disposed on the metal layer.

摘要翻译： 本发明提供一种集成电路结构。 集成电路结构包括其中形成有IC器件的衬底; 第一电介质材料层，设置在所述衬底上并且具有形成在其中的第一沟槽; 以及设置在所述第一沟槽中并与所述IC器件电耦合的第一复合互连特征。 第一复合互连特征包括设置在第一沟槽的侧壁上的第一阻挡层; 设置在所述第一阻挡层上的第一金属层; 以及设置在所述金属层上的第一石墨烯层。