公开(公告)号：US09384974B2

公开(公告)日：2016-07-05

申请号：US14285874

申请日：2014-05-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Suzuki ,  Kazuya Takahashi ,  Mitsuhiro Okada ,  Katsuhiko Komori ,  Satoshi Onodera

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02592 ,  H01L21/02645 ,  H01L21/02667

Abstract: The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed.

Abstract translation: 本公开提供了一种用于填充形成在工件的绝缘膜上的沟槽的方法。 该方法包括在限定沟槽的壁表面上形成第一含杂质的非晶硅膜，在第一非晶硅膜上形成第二非晶硅膜，并在形成第二非晶硅膜之后退火工件。