公开(公告)号：US5760442A

公开(公告)日：1998-06-02

申请号：US536451

申请日：1995-09-29

申请人： Naoyuki Shigyo ,  Toshiyuki Enda

发明人： Naoyuki Shigyo ,  Toshiyuki Enda

IPC分类号： H01L21/336 ,  H01L21/84 ,  H01L29/786 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L31/117

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L29/78603 ,  H01L29/78606

摘要： A first silicon oxide layer serving as an insulation layer is formed on a p-type semiconductor substrate. An n.sup.+ -type source and drain regions are formed on the p-type substrate 110 with a spacing therebetween. A channel region is interposed between the source and drain regions. A second silicon oxide layer serving as a gate insulation layer is formed on the channel region. A gate terminal is formed on the second silicon oxide layer. High-concentration p-type regions are formed in the p-type semiconductor substrate under the source and drain regions, respectively.

摘要翻译： 用作绝缘层的第一氧化硅层形成在p型半导体衬底上。 在p型衬底110上形成n +型源极和漏极区，其间具有间隔。 沟道区域介于源区和漏区之间。 用作栅极绝缘层的第二氧化硅层形成在沟道区上。 栅极端子形成在第二氧化硅层上。 在源极和漏极区域的p型半导体衬底中分别形成高浓度p型区域。

公开(公告)号：US08165852B2

公开(公告)日：2012-04-24

申请号：US12563517

申请日：2009-09-21

申请人： Toshiyuki Enda

发明人： Toshiyuki Enda

IPC分类号： G06F17/50

CPC分类号： G06F17/5018 ,  G06F2217/78

摘要： A simulation apparatus of semiconductor device includes a first calculator, a second calculator, a third calculator, a fourth calculator, and a controller. The first calculator applies a voltage to an area which functions as a virtual electrode, and setting a pseudo-Fermi level of a first carrier in the area functioning as the virtual electrode to calculate a first carrier density. The second calculator analyzes continuous equation of a second carrier to calculate a second carrier density. The third calculator uses the first carrier density as a function of an electrostatic potential, and solving a first equation of the function and a Poisson's equation to calculate an electrostatic potential and the first carrier density expressed by the function. The fourth calculator calculates a current density of the first carrier to calculate a current flowing. The controller controls the voltage applied to the virtual electrode.

摘要翻译： 半导体器件的模拟装置包括第一计算器，第二计算器，第三计算器，第四计算器和控制器。 第一计算器将电压施加到用作虚拟电极的区域，并且在用作虚拟电极的区域中设置第一载体的伪费米能级以计算第一载流子密度。 第二计算器分析第二载波的连续方程式来计算第二载流子密度。 第三计算器使用第一载流子密度作为静电势的函数，并且求解函数的第一方程和泊松方程来计算由该函数表达的静电势和第一载流子密度。 第四计算器计算第一载波的电流密度以计算电流流动。 控制器控制施加到虚拟电极的电压。

公开(公告)号：US07764542B2

公开(公告)日：2010-07-27

申请号：US12061105

申请日：2008-04-02

申请人： Toshiaki Edahiro ,  Takuya Futatsuyama ,  Toshiyuki Enda

发明人： Toshiaki Edahiro ,  Takuya Futatsuyama ,  Toshiyuki Enda

IPC分类号： G11C16/04

CPC分类号： G11C16/3418 ,  G11C16/3427

摘要： A method for programming a semiconductor memory device including such a program sequence as to program target threshold levels constituting multi-level data into multiple memory cells, which are simultaneously selected, wherein the program sequence is controlled to finish programming the multiple memory cells in order of height of the target threshold levels.

摘要翻译： 一种用于将包括这样的程序序列的半导体存储器件编程的方法，所述程序序列用于将构成多级数据的程序目标阈值水平同时选择为多个存储器单元，其中控制程序序列以完成多个存储器单元的编程， 目标阈值水平的高度。