公开(公告)号：US07371510B2

公开(公告)日：2008-05-13

申请号：US11702602

申请日：2007-02-06

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03F7/11 ,  G03F7/20 ,  G03F7/207

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US20060141400A1

公开(公告)日：2006-06-29

申请号：US10546358

申请日：2004-02-20

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03F7/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US20070134593A1

公开(公告)日：2007-06-14

申请号：US11702602

申请日：2007-02-06

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US07924400B2

公开(公告)日：2011-04-12

申请号：US12067925

申请日：2006-09-25

申请人： Nobuyuki Kohda ,  Masaaki Yoshida ,  Takayuki Yajima ,  Hiromitsu Tsuji

发明人： Nobuyuki Kohda ,  Masaaki Yoshida ,  Takayuki Yajima ,  Hiromitsu Tsuji

IPC分类号： G03B27/52 ,  G03B27/42

CPC分类号： G01N1/02 ,  G01N2001/028 ,  G01N2013/003 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70608

摘要： A method for measuring a liquid immersion lithography soluble fraction in an organic film including a mounting step of mounting a droplet of a liquid immersion medium for liquid immersion lithography on a surface of an organic film formed on a substrate; and a transfer step of transferring a component in the organic film into the droplet.

摘要翻译： 一种用于测量有机膜中的液浸光刻可溶部分的方法，包括将用于液浸光刻的液浸介质液滴安装在形成在基板上的有机膜的表面上的安装步骤; 以及将有机膜中的成分转移到液滴中的转印步骤。

公开(公告)号：US20090268173A1

公开(公告)日：2009-10-29

申请号：US12067925

申请日：2006-09-25

申请人： Nobuyuki Kohda ,  Masaaki Yoshida ,  Takayuki Yajima ,  Hiromitsu Tsuji

发明人： Nobuyuki Kohda ,  Masaaki Yoshida ,  Takayuki Yajima ,  Hiromitsu Tsuji

IPC分类号： G03B27/52 ,  G03B27/32

CPC分类号： G01N1/02 ,  G01N2001/028 ,  G01N2013/003 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70608

摘要： A method for measuring a liquid immersion lithography soluble fraction in an organic film including a mounting step of mounting a droplet of a liquid immersion medium for liquid immersion lithography on a surface of an organic film formed on a substrate and a transfer step of transferring a component in the organic film into the droplet.

摘要翻译： 一种用于测量有机膜中的液浸光刻可溶性部分的方法，包括将用于液浸光刻的液浸介质的液​​滴安装在形成在基板上的有机膜的表面上的安装步骤和转印步骤 在有机薄膜中进入液滴。

公开(公告)号：US20100124720A1

公开(公告)日：2010-05-20

申请号：US11995291

申请日：2006-07-05

申请人： Keita Ishiduka ,  Kotaro Endo ,  Masaaki Yoshida

发明人： Keita Ishiduka ,  Kotaro Endo ,  Masaaki Yoshida

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/11 ,  G03F7/70341 ,  G03F7/70958 ,  G03F7/70983

摘要： This invention provides a material for protective film formation, comprising at least an alkali soluble polymer comprising at least one of constitutional units represented by general formulae (I) and (II) and an alcoholic solvent. The material for protective film formation can simultaneously prevent a deterioration in a resist film during liquid immersion exposure and a deterioration in a liquid for liquid immersion exposure used and, at the same time, can form a resist pattern with a good shape without the need to increase the number of treatment steps.

摘要翻译： 本发明提供一种用于保护膜形成的材料，其至少包含含有由通式（I）和（II）表示的结构单元和醇溶剂中的至少一种的碱溶性聚合物。 用于保护膜形成的材料可以同时防止液浸期间的抗蚀剂膜的劣化和用于液浸的液体的劣化，并且同时可以形成具有良好形状的抗蚀剂图案，而不需要 增加治疗步骤的数量。

公开(公告)号：US20070031755A1

公开(公告)日：2007-02-08

申请号：US10568951

申请日：2004-08-25

申请人： Taku Hirayama ,  Kotaro Endo ,  Masaaki Yoshida ,  Kazumasa Wakiya

发明人： Taku Hirayama ,  Kotaro Endo ,  Masaaki Yoshida ,  Kazumasa Wakiya

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： The resist protective film forming material for liquid immersion lithography is provided, which is suitable when the non-aqueous solution with a high transparency and high refractive index exemplified by the fluorinated liquid is used. The resist protective film forming material includes at least one component selected from water-soluble and alkali-soluble film forming components. The liquid immersion lithography process improves the resolution of resist patterns by irradiating a light beam on a resist film interposing a given thickness of the non-aqueous solution with a refractive index higher than that of the air at least on the resist film in a path, along where the lithography exposing light beam passes to the resist film.

摘要翻译： 提供了用于液浸光刻的抗蚀剂保护膜形成材料，当使用以氟化液体为例说明的具有高透明度和高折射率的非水溶液时，这是合适的。 抗蚀剂保护膜形成材料包括选自水溶性和碱溶性成膜组分中的至少一种成分。 液浸式光刻工艺通过至少在路径上的抗蚀剂膜上照射介于非空气的折射率高于非水溶液的给定厚度的抗蚀剂膜上的光束来提高抗蚀剂图案的分辨率， 沿着光刻曝光光束到达抗蚀剂膜的方向。

公开(公告)号：US07846637B2

公开(公告)日：2010-12-07

申请号：US11587509

申请日：2005-04-25

申请人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

发明人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

IPC分类号： G03F7/09 ,  C08F12/20

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F232/08 ,  G03F7/2041

摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.

摘要翻译： 液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率 的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。 因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是 增加，然后抗蚀剂图案具有较高的分辨能力。

公开(公告)号：US20080311523A1

公开(公告)日：2008-12-18

申请号：US11658900

申请日：2005-07-29

申请人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

发明人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.

摘要翻译： 在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加 处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。 此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。 使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

公开(公告)号：US20080032202A1

公开(公告)日：2008-02-07

申请号：US11587509

申请日：2005-04-25

申请人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

发明人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

IPC分类号： C08F20/10 ,  C08F22/00 ,  C08F36/16 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F232/08 ,  G03F7/2041

摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.

摘要翻译： 液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率 的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。 因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是 增加，然后抗蚀剂图案具有较高的分辨能力。