公开(公告)号：US07879529B2

公开(公告)日：2011-02-01

申请号：US11658900

申请日：2005-07-29

申请人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

发明人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

IPC分类号： G03F7/11 ,  G03F7/26 ,  C07D265/00 ,  C07D285/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.

摘要翻译： 在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加 处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。 此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。 使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

公开(公告)号：US07846637B2

公开(公告)日：2010-12-07

申请号：US11587509

申请日：2005-04-25

申请人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

发明人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

IPC分类号： G03F7/09 ,  C08F12/20

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F232/08 ,  G03F7/2041

摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.

摘要翻译： 液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率 的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。 因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是 增加，然后抗蚀剂图案具有较高的分辨能力。

公开(公告)号：US20080311523A1

公开(公告)日：2008-12-18

申请号：US11658900

申请日：2005-07-29

申请人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

发明人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.

摘要翻译： 在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加 处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。 此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。 使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

公开(公告)号：US20080032202A1

公开(公告)日：2008-02-07

申请号：US11587509

申请日：2005-04-25

申请人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

发明人： Keita Ishizuka ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

IPC分类号： C08F20/10 ,  C08F22/00 ,  C08F36/16 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F232/08 ,  G03F7/2041

摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.

摘要翻译： 液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率 的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。 因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是 增加，然后抗蚀剂图案具有较高的分辨能力。

公开(公告)号：US20090197199A1

公开(公告)日：2009-08-06

申请号：US11659006

申请日：2005-07-29

申请人： Keita Ishizuka ,  Kotaro Endo ,  Tomoyuki Hirano

发明人： Keita Ishizuka ,  Kotaro Endo ,  Tomoyuki Hirano

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/2041 ,  Y10S430/128

摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.

摘要翻译： 在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加 处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。 使用碱溶性聚合物，交联剂和能够溶解至少构成成分的溶剂，制备组合物，并使用该组合物在所使用的抗蚀剂膜的表面上形成保护膜。

公开(公告)号：US07951523B2

公开(公告)日：2011-05-31

申请号：US11659006

申请日：2005-07-29

申请人： Keita Ishizuka ,  Kotaro Endo ,  Tomovuki Hiranoa

发明人： Keita Ishizuka ,  Kotaro Endo ,  Tomovuki Hiranoa

IPC分类号： G03F7/11 ,  C07D265/00 ,  C07D285/00

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/2041 ,  Y10S430/128

摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.

摘要翻译： 在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加 处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。 使用碱溶性聚合物，交联剂和能够溶解至少构成成分的溶剂，制备组合物，并使用该组合物在所使用的抗蚀剂膜的表面上形成保护膜。