公开(公告)号：US08884337B2

公开(公告)日：2014-11-11

申请号：US13858927

申请日：2013-04-08

Applicant: United Microelectronics Corp.

Inventor： Chang-Tzu Wang ,  Ping-Chen Chang ,  Tien-Hao Tang

IPC: H01L27/118 ,  H03K3/013

CPC classification number: H03K19/00 ,  H01L27/0207 ,  H01L27/0738 ,  H01L27/088 ,  H01L27/092 ,  H03K19/00361

Abstract: An output buffer includes an input/output end, a voltage source, a first transistor and a second transistor. The first transistor includes a first end coupled to the input/output end, a second end coupled to the voltage source, and a control end coupled to the voltage source. The second transistor includes a first end coupled to the input/output end, a second end coupled to the voltage source, and a control end coupled to the voltage source. The control end of the first transistor and the control end of the second transistor are substantially perpendicular to each other, and the punch through voltage of the first transistor is higher than the punch through voltage of the second transistor.

Abstract translation: 输出缓冲器包括输入/​​输出端，电压源，第一晶体管和第二晶体管。 第一晶体管包括耦合到输入/输出端的第一端，耦合到电压源的第二端和耦合到电压源的控制端。 第二晶体管包括耦合到输入/输出端的第一端，耦合到电压源的第二端和耦合到电压源的控制端。 第一晶体管的控制端和第二晶体管的控制端基本上彼此垂直，并且第一晶体管的穿通电压高于第二晶体管的穿通电压。

公开(公告)号：US08711535B2

公开(公告)日：2014-04-29

申请号：US13891199

申请日：2013-05-10

Applicant: United Microelectronics Corp.

Inventor： Chang-Tzu Wang ,  Tien-Hao Tang ,  Kuan-Cheng Su

IPC: H02H3/20 ,  H01L27/02

CPC classification number: H02H3/20 ,  H01L27/0262 ,  H01L2924/1301 ,  H01L2924/1304 ,  H02H9/04 ,  H02H9/046

Abstract: The ESD protection circuit is electrically connected between a first power rail and a second power rail, and includes an ESD protection device, a switching device electrically connected between the ESD protection device and a first power rail, and a low-pass filter electrically connected between the first power rail and the first switching device. The ESD protection device includes a BJT and a first resistor electrically connected between a base of the BJT and a first power rail. When no ESD event occurs, a potential of the base is larger than or equal to a potential of an emitter of the BJT. When the ESD event occurs, the potential of the base is smaller than the potential of the emitter.

Abstract translation: ESD保护电路电连接在第一电力轨道和第二电力轨道之间，并且包括ESD保护装置，电连接在ESD保护装置和第一电力轨道之间的开关装置和电连接在第一电力轨道之间的低通滤波器 第一电力轨道和第一开关装置。 ESD保护器件包括BJT和电连接在BJT的基极和第一电源轨之间的第一电阻器。 当不发生ESD事件时，基极的电位大于或等于BJT发射极的电位。 当ESD事件发生时，基极的电位小于发射极的电位。

公开(公告)号：US20130250462A1

公开(公告)日：2013-09-26

申请号：US13891199

申请日：2013-05-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Tzu Wang ,  Tien-Hao Tang ,  Kuan-Cheng Su

IPC: H02H9/04

CPC classification number: H02H3/20 ,  H01L27/0262 ,  H01L2924/1301 ,  H01L2924/1304 ,  H02H9/04 ,  H02H9/046

Abstract: The ESD protection circuit is electrically connected between a first power rail and a second power rail, and includes an ESD protection device, a switching device electrically connected between the ESD protection device and a first power rail, and a low-pass filter electrically connected between the first power rail and the first switching device. The ESD protection device includes a BJT and a first resistor electrically connected between a base of the BJT and a first power rail. When no ESD event occurs, a potential of the base is larger than or equal to a potential of an emitter of the BJT. When the ESD event occurs, the potential of the base is smaller than the potential of the emitter.

Abstract translation: ESD保护电路电连接在第一电力轨道和第二电力轨道之间，并且包括ESD保护装置，电连接在ESD保护装置和第一电力轨道之间的开关装置和电连接在第一电力轨道之间的低通滤波器 第一电力轨道和第一开关装置。 ESD保护器件包括BJT和电连接在BJT的基极和第一电源轨之间的第一电阻器。 当不发生ESD事件时，基极的电位大于或等于BJT发射极的电位。 当ESD事件发生时，基极的电位小于发射极的电位。