公开(公告)号：US20170084603A1

公开(公告)日：2017-03-23

申请号：US14924708

申请日：2015-10-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L27/088

CPC classification number: H01L27/0277 ,  H01L27/0259 ,  H01L27/0886 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/42372 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7851

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region.

公开(公告)号：US20160260700A1

公开(公告)日：2016-09-08

申请号：US14724825

申请日：2015-05-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Chen Chang

IPC: H01L27/02 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L27/0255 ,  H01L27/027 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0873 ,  H01L29/78 ,  H01L29/7818 ,  H01L29/7831 ,  H01L29/7835

Abstract: An electrostatic discharge protection semiconductor device includes a substrate, a gate set positioned on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the drain region, and at least a second doped region formed in the substrate. The source region and the drain region include a first conductivity type, the first doped region and the second doped region include a second conductivity type, and the first conductivity and the second conductivity type are complementary to each other. The first doped region and the second doped region are electrically connected to each other.

Abstract translation: 一种静电放电保护半导体器件，包括：基板，位于基板上的栅极集电体，分别位于栅极集合体两侧的基板上形成的源极区域和漏极区域，形成在漏极区域中的至少第一掺杂区域， 以及形成在所述衬底中的至少第二掺杂区域。 源极区域和漏极区域包括第一导电类型，第一掺杂区域和第二掺杂区域包括第二导电类型，并且第一导电性和第二导电类型彼此互补。 第一掺杂区域和第二掺杂区域彼此电连接。