公开(公告)号：US11056154B2

公开(公告)日：2021-07-06

申请号：US16368868

申请日：2019-03-29

Applicant: Winbond Electronics Corp.

Inventor： Sho Okabe

IPC: G11C5/14 ,  G11C16/32 ,  G11C16/26 ,  G11C16/14 ,  G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/30

Abstract: A semiconductor memory device for reducing the peak current during the read operation is provided. A flash memory of the disclosure includes a memory cell array; a plurality of charge pump circuits; and a controller controlling a timing of activating the charge pump circuits when a selected page of the memory cell array is read so that the charge pump circuits are not activated at the same timing.