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220 条记录 (耗时 0.029 秒)

    Process cartridge and image forming apparatus usable with this process cartridge
    21.
    发明授权
    Process cartridge and image forming apparatus usable with this process cartridge 失效
    可与该处理盒一起使用的处理盒和图像形成装置

    公开(公告)号：US5745823A

    公开(公告)日：1998-04-28

    申请号：US905552

    申请日：1992-06-25

    申请人： Shinji Goto ,  Jun Saito ,  Hiroyuki Ishii ,  Masao Ando ,  Yoshiaki Watanabe ,  Yuzo Isoda ,  Masahide Tanoue ,  Ryukichi Inoue

    发明人： Shinji Goto ,  Jun Saito ,  Hiroyuki Ishii ,  Masao Ando ,  Yoshiaki Watanabe ,  Yuzo Isoda ,  Masahide Tanoue ,  Ryukichi Inoue

    IPC分类号： G03G21/16 ,  G03G15/00 ,  G03G21/00 ,  G03G21/10 ,  G03G21/18

    CPC分类号： G03G21/1853 ,  G03G21/1647 ,  G03G2221/1654 ,  G03G2221/183 ,  G03G2221/1884

    摘要： An image forming apparatus, to which a process cartridge is detachably mountable, for forming an image on a recording material. The image forming apparatus includes a first guiding device for guiding the process cartridge toward a predetermined mounting position when the process cartridge is mounted to the image forming apparatus. The first guiding device is disposed upstream of the predetermined mounting position with respect to a mounting movement direction of the process cartridge. A second guiding device is provided for guiding the process cartridge toward the predetermined mounting position when the process cartridge is mounted to the image forming apparatus The second guiding device is disposed (i) closer to the predetermined position than the first guiding device, and (ii) downstream of the first guiding device with respect to the mounting movement direction. Also provided is a feeding device for feeding the recording material.

    摘要翻译： 图像形成装置，处理盒可拆卸地安装在该成像装置上，用于在记录材料上形成图像。 图像形成装置包括第一引导装置，用于当处理盒安装到图像形成装置时将处理盒朝向预定的安装位置引导。 第一引导装置相对于处理盒的安装移动方向设置在预定安装位置的上游。 第二引导装置被设置用于当处理盒安装到图像形成装置时将处理盒引向预定的安装位置。第二引导装置设置成（i）比第一引导装置更靠近预定位置，和（ii ）相对于安装移动方向在第一引导装置的下游。 还提供了用于馈送记录材料的进给装置。

    Air cooling fan arrangement in a microwave heating device
    23.
    发明授权
    Air cooling fan arrangement in a microwave heating device 失效
    空气冷却风扇布置在微波加热装置中

    公开(公告)号：US5393961A

    公开(公告)日：1995-02-28

    申请号：US069519

    申请日：1993-06-01

    申请人： Yasuhiro Umekage ,  Shinichi Sakai ,  Yoshiaki Watanabe ,  Hisashi Morikawa ,  Makoto Mihara

    发明人： Yasuhiro Umekage ,  Shinichi Sakai ,  Yoshiaki Watanabe ,  Hisashi Morikawa ,  Makoto Mihara

    IPC分类号： H05B6/80 ,  H05B6/64

    CPC分类号： H05B6/642

    摘要： In a microwave heating device, a propeller fan is mounted on a drive shaft of a motor that in vertically positioned parts of a high frequency power supply unit are arranged in the order of a power control semiconductor device and a high-voltage transformer along the direction of revolution of the propeller fan. The motor is secured to a support member formed by a motor cover attached to the casing of the propeller fan. The fan and high frequency power supply unit are mounted to a first frame and a second frame, both of which are bent and connected at a connecting portion and fixed in an approximately "L" shape, while an airflow path is defined by a first guide wall and a second guide wall to cool the parts of the high frequency power supply unit. An airflow path is formed by a plurality of guide walls provided on the two frames, and a communicating hole is provided in proximity to the connecting portion of the two frames. The propeller fan is so arranged as to revolve at a low r.p.m. after stopping the microwave heating.

    摘要翻译： 在微波加热装置中，螺旋桨式风扇安装在电动机的驱动轴上，在高频电源单元的垂直定位部分沿着方向以功率控制半导体器件和高压变压器的顺序排列 的螺旋桨风扇革命。 马达被固定到由附接到螺旋桨式风扇的壳体的马达盖形成的支撑构件。 风扇和高频电源单元安装在第一框架和第二框架上，第一框架和第二框架都被弯曲并连接在连接部分并固定成大致“L”形，同时气流路径由第一导向件 壁和第二引导壁以冷却高频电源单元的部件。 由设置在两个框架上的多个引导壁形成气流路径，并且在两个框架的连接部分附近设置有连通孔。 螺旋桨风扇布置成以低r.p.m旋转。 停止微波加热后。

    Method for producing a silicon thin film transistor
    26.
    发明授权
    Method for producing a silicon thin film transistor 失效
    生产硅薄膜晶体管的方法

    公开(公告)号：US5071779A

    公开(公告)日：1991-12-10

    申请号：US494037

    申请日：1990-03-15

    申请人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

    发明人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

    IPC分类号： H01L21/336 ,  H01L29/786

    CPC分类号： H01L29/66765 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/7866 ,  H01L29/78669

    摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

    Method for producing amorphous silicon thin film transistor array substrate
    27.
    发明授权
    Method for producing amorphous silicon thin film transistor array substrate 失效
    非晶硅薄膜晶体管阵列基板的制造方法

    公开(公告)号：US5045485A

    公开(公告)日：1991-09-03

    申请号：US383119

    申请日：1989-07-19

    申请人： Sakae Tanaka ,  Yoshiaki Watanabe

    发明人： Sakae Tanaka ,  Yoshiaki Watanabe

    IPC分类号： H01L21/77 ,  H01L21/84

    CPC分类号： H01L27/1214

    摘要： A method for producing an amorphous silicon thin film transistor array substrate comprising successively coating a gate insulating layer, an amorphous silicon layer and a protective insulating layer on a glass substrate provided with a gate electrode and a gate wiring having a predetermined shape, in such a manner as to not cover the connecting terminal region of the gate wiring. A protective insulating layer is patterned into a predetermined shape. After passing through a predetermined production process to produce an amorphous silicon thin film transistor array, at least a gate wiring and a source wiring are provided. The step of patterning the protective insulating layer comprises covering the connecting terminals of the gate wiring and the exposed region of the glass substrate with a photoresist.

    Silicon thin film transistor
    28.
    发明授权
    Silicon thin film transistor 失效
    硅薄膜晶体管

    公开(公告)号：US5021850A

    公开(公告)日：1991-06-04

    申请号：US377873

    申请日：1989-07-10

    申请人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

    发明人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

    IPC分类号： H01L21/336 ,  H01L29/786

    CPC分类号： H01L29/66765 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/7866 ,  H01L29/78669

    摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

    摘要翻译： 硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管，每个硅薄膜晶体管包括绝缘基板，形成在绝缘基板上的栅电极，形成在绝缘基板上的栅绝缘层， 栅电极，一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层，形成在一对第一杂质上的本征硅层含有硅层和在 一对第一杂质之间的栅极绝缘层包含硅层，以便连接一对第一杂质含硅层，形成在本征硅层上的保护绝缘层，以及形成在源极电极和漏电极 该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。

    Dynamic pressure bearing device
    29.
    发明授权
    Dynamic pressure bearing device 失效
    动压轴承装置

    公开(公告)号：US5018880A

    公开(公告)日：1991-05-28

    申请号：US372613

    申请日：1989-06-28

    申请人： Mikio Nakasugi ,  Yoshiaki Watanabe

    发明人： Mikio Nakasugi ,  Yoshiaki Watanabe

    IPC分类号： F16C33/10

    CPC分类号： F16C33/107 ,  F16C17/107

    摘要： A dynamic pressure bearing device a relatively rotatable shaft member and sleeve member, accommodating the shaft member, are relatively supported with respect to a thrust direction and a radial direction, and wherein there is provided a circulation passageway for circulating a fluid along at least a part of a thrust surface between the shaft member and the sleeve member.

    摘要翻译： 容纳轴构件的相对旋转的轴构件和套筒构件的动态压力承载装置相对于推力方向和径向相对地相对地支撑，并且其中设置有循环通道，用于沿至少一部分循环流体 在轴构件和套筒构件之间的推力表面。