公开(公告)号：US20050139230A1

公开(公告)日：2005-06-30

申请号：US11017699

申请日：2004-12-22

申请人： Tsuyoshi Miyata ,  Yuichi Miyoshi ,  Yoshiaki Namioka

发明人： Tsuyoshi Miyata ,  Yuichi Miyoshi ,  Yoshiaki Namioka

IPC分类号： H01L21/304 ,  B08B3/00 ,  B08B3/08 ,  C11D7/00 ,  C11D7/02 ,  C11D7/08 ,  C11D11/00 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B3/08 ,  C11D7/02 ,  C11D7/08 ,  C11D11/0047

摘要： A method for cleaning a semiconductor wafer according to the present invention includes the steps of: removing particles on a semiconductor wafer with an alkaline chemical solution to clean the wafer; neutralizing a surface charge of the semiconductor wafer with a weak acid cleaning solution; and removing residual metal impurities on the semiconductor wafer with an acid chemical solution to clean the wafer. The surface of the semiconductor wafer is neutralized and the HPM treatment is then performed with the semiconductor wafer having no charge. As a result, the surface of the semiconductor wafer can be made extremely clean without attaching metal impurities thereto.

摘要翻译： 根据本发明的用于清洁半导体晶片的方法包括以下步骤：用碱性化学溶液去除半导体晶片上的颗粒以清洁晶片; 用弱酸清洗溶液中和半导体晶片的表面电荷; 并用酸化学溶液去除半导体晶片上的残余金属杂质以清洁晶片。 半导体晶片的表面被中和，然后用无电荷的半导体晶片进行HPM处理。 结果，半导体晶片的表面可以非常清洁，而不会附着金属杂质。

公开(公告)号：US06214126B1

公开(公告)日：2001-04-10

申请号：US08744688

申请日：1996-11-07

申请人： Yuichi Miyoshi ,  Michikazu Matsumoto ,  Teruhito Ohnishi

发明人： Yuichi Miyoshi ,  Michikazu Matsumoto ,  Teruhito Ohnishi

IPC分类号： C23G2300

CPC分类号： H01L21/02052 ,  Y10S134/902

摘要： A silicon substrate is cleaned using a liquid mixture primarily containing ammonia and hydrogen peroxide. A liquid containing ammonia is added to the liquid mixture to maintain the concentration of ammonia in the liquid mixture applied to the silicon substrate in the range between 2.5 wt. % and 3.5 wt. %. The liquid containing ammonia is added to the liquid mixture at a constant time interval. The constant time interval is set to be equal to a time period which is necessary for the concentration of ammonia in the liquid mixture to change from a first concentration level of no more than 3.5 wt. % to a second concentration level of no less than 2.5 wt. %, the second concentration level being lower than the first concentration level. The concentration of ammonia in the liquid containing ammonia and the amount thereof to be added to the liquid mixture are adjusted so as to increase the concentration of ammonia in the liquid mixture to the first concentration level by addition thereof.

摘要翻译： 使用主要含有氨和过氧化氢的液体混合物清洁硅衬底。 将含有氨的液体加入到液体混合物中，以将液体混合物中的氨的浓度保持在硅衬底上，其浓度在2.5wt。 ％和3.5wt。 ％。 将含有氨的液体以恒定的时间间隔加入到液体混合物中。 将恒定时间间隔设定为等于液体混合物中的氨浓度从不超过3.5重量％的第一浓度水平变化所需的时间段。 ％至第二浓度水平不低于2.5wt。 ％，第二浓度水平低于第一浓度水平。 调节含氨液体中的氨浓度和加入到液体混合物中的量，以便通过添加将液体混合物中的氨浓度提高到第一浓度水平。