公开(公告)号：US20110215672A1

公开(公告)日：2011-09-08

申请号：US13109371

申请日：2011-05-17

Applicant: TOHRU YAMAOKA ,  YUICHI MIYOSHI ,  YUSUKE TAKEUCHI

Inventor： TOHRU YAMAOKA ,  YUICHI MIYOSHI ,  YUSUKE TAKEUCHI

IPC: H02N1/00

CPC classification number: B81B3/0072

Abstract: A MEMS device includes: a semiconductor substrate; a vibrating film formed on the semiconductor substrate with a restraining portion interposed between the vibrating film and the semiconductor substrate, and including a lower electrode, and a fixed film formed on the semiconductor substrate with a support portion interposed between the fixed film and the semiconductor substrate to cover the vibrating film, and including an upper electrode. A gap formed between the vibrating film and the fixed film opposed to each other forms an air gap. The restraining portion provides partial coupling between the semiconductor substrate and the vibrating film, and the vibrating film has a multilayer structure in which the lower electrode and a compressive stress inducing insulating film are laminated. The insulating film is located within the perimeter of the lower electrode.

Abstract translation: MEMS器件包括：半导体衬底; 形成在所述半导体基板上的振动膜，具有介于所述振动膜和所述半导体基板之间的限制部分，并且包括下电极;以及固定膜，其形成在所述半导体基板上，所述固定膜插入在所述固定膜和所述半导体基板之间 以覆盖振动膜，并且包括上电极。 彼此相对的振动膜和固定膜之间形成的间隙形成气隙。 约束部分提供半导体衬底和振动膜之间的部分耦合，并且振动膜具有层叠下部电极和压缩应力诱导绝缘膜的多层结构。 绝缘膜位于下电极的周边内。

公开(公告)号：US20110044480A1

公开(公告)日：2011-02-24

申请号：US12939748

申请日：2010-11-04

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R19/01

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 驻极体电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为驻极体膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

公开(公告)号：US07853027B2

公开(公告)日：2010-12-14

申请号：US10591597

申请日：2005-02-07

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R25/00

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为电膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

公开(公告)号：US20090116675A1

公开(公告)日：2009-05-07

申请号：US12092762

申请日：2006-08-03

Applicant: Yuichi Miyoshi

Inventor： Yuichi Miyoshi

IPC: H04R19/04 ,  G01P15/125 ,  H01L21/306

CPC classification number: G01P15/125 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  G01P15/0802 ,  G01P2015/084 ,  H04R19/005

Abstract: A diaphragm (14) is formed using MEMS technology. The diaphragm (14) has a hinge structure, and at least one of a hinge upper corner portion and a hinge lower corner portion of the diaphragm (14) is rounded.

Abstract translation: 使用MEMS技术形成隔膜（14）。 隔膜（14）具有铰链结构，并且隔膜（14）的铰链上角部和铰链下角部中的至少一个是圆形的。

公开(公告)号：US20070189555A1

公开(公告)日：2007-08-16

申请号：US10591597

申请日：2005-02-07

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R25/00

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为电膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109。 在气隙109中暴露的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

公开(公告)号：US20060027571A1

公开(公告)日：2006-02-09

申请号：US11187923

申请日：2005-07-25

Applicant: Yuichi Miyoshi ,  Kou Sugano ,  Yasuo Satoh

Inventor： Yuichi Miyoshi ,  Kou Sugano ,  Yasuo Satoh

IPC: H05B6/80

CPC classification number: H05B6/802

Abstract: Microwaves are applied to pure water stored in a pure water tank past at least one of the top section of the sealed pure water tank, the side sections thereof and the bottom section thereof, thereby heating the pure water in a non-contact manner.

Abstract translation: 将微波应用于通过密封纯水槽的顶部部分，其侧部和底部中的至少一个上储存在纯水槽中的纯水，从而以非接触的方式加热纯水。

公开(公告)号：US20050139230A1

公开(公告)日：2005-06-30

申请号：US11017699

申请日：2004-12-22

Applicant: Tsuyoshi Miyata ,  Yuichi Miyoshi ,  Yoshiaki Namioka

Inventor： Tsuyoshi Miyata ,  Yuichi Miyoshi ,  Yoshiaki Namioka

IPC: H01L21/304 ,  B08B3/00 ,  B08B3/08 ,  C11D7/00 ,  C11D7/02 ,  C11D7/08 ,  C11D11/00 ,  H01L21/302 ,  H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D7/02 ,  C11D7/08 ,  C11D11/0047

Abstract: A method for cleaning a semiconductor wafer according to the present invention includes the steps of: removing particles on a semiconductor wafer with an alkaline chemical solution to clean the wafer; neutralizing a surface charge of the semiconductor wafer with a weak acid cleaning solution; and removing residual metal impurities on the semiconductor wafer with an acid chemical solution to clean the wafer. The surface of the semiconductor wafer is neutralized and the HPM treatment is then performed with the semiconductor wafer having no charge. As a result, the surface of the semiconductor wafer can be made extremely clean without attaching metal impurities thereto.

Abstract translation: 根据本发明的用于清洁半导体晶片的方法包括以下步骤：用碱性化学溶液去除半导体晶片上的颗粒以清洁晶片; 用弱酸清洗溶液中和半导体晶片的表面电荷; 并用酸化学溶液去除半导体晶片上的残余金属杂质以清洁晶片。 半导体晶片的表面被中和，然后用无电荷的半导体晶片进行HPM处理。 结果，半导体晶片的表面可以非常清洁，而不会附着金属杂质。

公开(公告)号：US06214126B1

公开(公告)日：2001-04-10

申请号：US08744688

申请日：1996-11-07

Applicant: Yuichi Miyoshi ,  Michikazu Matsumoto ,  Teruhito Ohnishi

Inventor： Yuichi Miyoshi ,  Michikazu Matsumoto ,  Teruhito Ohnishi

IPC: C23G2300

CPC classification number: H01L21/02052 ,  Y10S134/902

Abstract: A silicon substrate is cleaned using a liquid mixture primarily containing ammonia and hydrogen peroxide. A liquid containing ammonia is added to the liquid mixture to maintain the concentration of ammonia in the liquid mixture applied to the silicon substrate in the range between 2.5 wt. % and 3.5 wt. %. The liquid containing ammonia is added to the liquid mixture at a constant time interval. The constant time interval is set to be equal to a time period which is necessary for the concentration of ammonia in the liquid mixture to change from a first concentration level of no more than 3.5 wt. % to a second concentration level of no less than 2.5 wt. %, the second concentration level being lower than the first concentration level. The concentration of ammonia in the liquid containing ammonia and the amount thereof to be added to the liquid mixture are adjusted so as to increase the concentration of ammonia in the liquid mixture to the first concentration level by addition thereof.

Abstract translation: 使用主要含有氨和过氧化氢的液体混合物清洁硅衬底。 将含有氨的液体加入到液体混合物中，以将液体混合物中的氨的浓度保持在硅衬底上，其浓度在2.5wt。 ％和3.5wt。 ％。 将含有氨的液体以恒定的时间间隔加入到液体混合物中。 将恒定时间间隔设定为等于液体混合物中的氨浓度从不超过3.5重量％的第一浓度水平变化所需的时间段。 ％至第二浓度水平不低于2.5wt。 ％，第二浓度水平低于第一浓度水平。 调节含氨液体中的氨浓度和加入到液体混合物中的量，以便通过添加将液体混合物中的氨浓度提高到第一浓度水平。

公开(公告)号：US20060244191A1

公开(公告)日：2006-11-02

申请号：US11374058

申请日：2006-03-14

Applicant: Kou Sugano ,  Yuichi Miyoshi ,  Kazushige Adachi

Inventor： Kou Sugano ,  Yuichi Miyoshi ,  Kazushige Adachi

IPC: B23Q3/00

CPC classification number: H01L21/00

Abstract: A chip holder includes: a lower holder plate with a first through hole; and an upper holder plate with a second through hole. An object to be treated is held movably in a holding space formed of the first through hole and the second through hole in assembling the lower holder plate and the upper holder plate.

Abstract translation: 芯片保持器包括：具有第一通孔的下保持器板; 和具有第二通孔的上支架板。 在组装下保持板和上保持板的过程中，待处理物体可移动地保持在由第一通孔和第二通孔形成的保持空间中。

公开(公告)号：US06291350B1

公开(公告)日：2001-09-18

申请号：US09127819

申请日：1998-08-03

Applicant: Shin Hashimoto ,  Yuichi Miyoshi

Inventor： Shin Hashimoto ,  Yuichi Miyoshi

IPC: H01L21302

CPC classification number: B24B37/04 ,  B24B1/04 ,  B24B57/02

Abstract: An ultrasonic transmitting unit transmits an ultrasonic wave to a slurry supply pipe. A polishing slurry is conveyed under pressure from a slurry supply tank to a slurry outlet via the slurry supply pipe and supplied from the slurry outlet to a surface of a polishing cloth. A wafer carrier holding a semiconductor wafer presses a surface of the semiconductor wafer against the surface of the polishing cloth coated with the polishing slurry and moves the semiconductor wafer relative to the polishing cloth to polish the surface of the semiconductor wafer. A discharged slurry flown out of the surface of the polishing cloth is discharged via a discharged slurry pipe. The application of the ultrasonic wave allows abrasive particles agglomerated in the polishing slurry in the slurry supply pipe to be re-dispersed into individual forms in the polishing slurry.

Abstract translation: 超声波发送单元向浆料供给管发送超声波。 抛光浆料在压力下通过浆料供给管从浆料供应罐输送到浆料出口，并从浆料出口供给到抛光布的表面。 保持半导体晶片的晶片载体将覆盖有抛光浆料的抛光布的表面压在半导体晶片的表面上，并使半导体晶片相对于抛光布移动以抛光半导体晶片的表面。 从抛光布表面流出的排出的浆料通过排出的浆料管排出。 超声波的应用允许在浆料供给管中的研磨浆中附着的磨料颗粒在抛光浆料中再分散成各种形式。