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公开(公告)号:US20190013790A1
公开(公告)日:2019-01-10
申请号:US16029364
申请日:2018-07-06
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
CPC classification number: H03H7/0161 , H03H7/38 , H03H2210/033 , H03H2210/036 , H04B1/0053 , H04B1/006 , H04B1/0067 , H04L5/001 , H04W28/065 , H04W72/0453
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号:US20180159486A1
公开(公告)日:2018-06-07
申请号:US15372260
申请日:2016-12-07
Applicant: pSemi Corporation
Inventor: Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
CPC classification number: H03F1/56 , H03F3/19 , H03F3/21 , H03F2200/387 , H03F2200/451
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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