公开(公告)号：US09461044B1

公开(公告)日：2016-10-04

申请号：US14953427

申请日：2015-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Cheng Chang ,  Chih-Han Lin ,  Horng-Huei Tseng

IPC: H01L29/76 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/66 ,  H01L29/423 ,  H01L21/311 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L21/84

CPC classification number: H01L27/0886 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/7831

Abstract: A substrate is patterned to form trenches and a semiconductor fin between the trenches. Insulators are formed in the trenches and a dielectric layer is formed to cover the semiconductor fin and the insulators. A dummy gate strip is formed on the dielectric layer. Spacers are formed on sidewalls of the dummy gate strip. The dummy gate strip and the dielectric layer underneath are removed until sidewalls of the spacers, a portion of the semiconductor fin and portions of the insulators are exposed. A second dielectric layer is selectively formed to cover the exposed portion of the semiconductor fin, wherein a thickness of the dielectric layer is smaller than a thickness of the second dielectric layer. A gate is formed between the spacers to cover the second dielectric layer, the sidewalls of the spacers and the exposed portions of the insulators.

Abstract translation: 图案化衬底以在沟槽之间形成沟槽和半导体鳍片。 在沟槽中形成绝缘体，并且形成介电层以覆盖半导体鳍片和绝缘体。 在电介质层上形成虚拟栅条。 间隔件形成在虚拟栅极条的侧壁上。 去除伪栅极条和下面的介电层，直到间隔物的侧壁，半导体鳍片的一部分和绝缘体的一部分露出。 选择性地形成第二电介质层以覆盖半导体鳍片的暴露部分，其中电介质层的厚度小于第二介电层的厚度。 在间隔物之间​​形成栅极以覆盖第二电介质层，隔离物的侧壁和绝缘体的暴露部分。

公开(公告)号：US09391205B2

公开(公告)日：2016-07-12

申请号：US14517272

申请日：2014-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Che-Cheng Chang ,  Chih-Han Lin ,  Jr-Jung Lin

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01L21/31111 ,  H01L21/32133 ,  H01L21/32137 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a metal gate structure formed over a fin structure of the substrate. The semiconductor structure further includes a spacer formed on a sidewall of the metal gate structure and a source/drain structure formed in the fin structure. In addition, the spacer is in direct contact with the fin structure.

Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括在基板的翅片结构上形成的基板和金属栅极结构。 半导体结构还包括形成在金属栅极结构的侧壁上的隔离物和形成在鳍结构中的源极/漏极结构。 此外，间隔件与翅片结构直接接触。