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    Microstructured pattern inspection method
    31.
    发明授权
    Microstructured pattern inspection method 有权
    微结构图案检验方法

    公开(公告)号：US08304724B2

    公开(公告)日：2012-11-06

    申请号：US12848278

    申请日：2010-08-02

    Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    IPC: G01N23/225 ,  G01N23/00

    CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

    Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

    Abstract translation: 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

    PATTERN MATCHING METHOD AND IMAGE PROCESSING DEVICE
    33.
    发明申请
    PATTERN MATCHING METHOD AND IMAGE PROCESSING DEVICE 有权
    图案匹配方法和图像处理装置

    公开(公告)号：US20110262043A1

    公开(公告)日：2011-10-27

    申请号：US13122151

    申请日：2009-10-02

    Applicant: Yoshimichi Sato ,  Mitsuji Ikeda ,  Fumihiro Sasajima

    Inventor： Yoshimichi Sato ,  Mitsuji Ikeda ,  Fumihiro Sasajima

    IPC: G06K9/62

    CPC classification number: H01J37/28 ,  G06K9/00127 ,  G06K2209/403 ,  G06T7/74 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J2237/24592

    Abstract: A pattern matching method for a scanning electron microscope comprises a step of performing pattern matching of only an upper layer pattern between an image (101) in which a pattern consisting of plural layers is represented and a template (104) in which the upper layer pattern of the plural layer pattern is selectively represented, thereby identifying the position of the pattern consisting of the plural layers. Then, information about the upper layer pattern is subtracted from the image (101), thus extracting shape information (108) about the lower layer pattern. Consequently, stable positioning or selective information extraction on a certain layer is enabled regardless of the state of the depths of a pattern formed in three dimensions or of the charge state of a sample.

    Abstract translation: 用于扫描电子显微镜的图案匹配方法包括在表示由多个层组成的图案的图像（101）和仅具有上层图案的模板（104）之间执行仅上层图案的图案匹配的步骤， 选择性地表示多层图案，由此识别由多层组成的图案的位置。 然后，从图像（101）中减去关于上层图案的信息，从而提取关于下层图案的形状信息（108）。 因此，无论在三维或样品的充电状态中形成的图案的深度的状态如何，都能够使特定层上的稳定定位或选择性信息提取。

    Scanning electron microscope and a method for pattern composite inspection using the same
    34.
    发明授权
    Scanning electron microscope and a method for pattern composite inspection using the same 有权
    扫描电子显微镜和使用其的图案复合检查方法

    公开(公告)号：US07884322B2

    公开(公告)日：2011-02-08

    申请号：US11976968

    申请日：2007-10-30

    Applicant: Fumihiro Sasajima ,  Saori Kato

    Inventor： Fumihiro Sasajima ,  Saori Kato

    IPC: G01N23/00 ,  G21K7/00 ,  G06K9/00

    CPC classification number: G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J2237/2817

    Abstract: A scanning electron microscope capable of performing alone the critical dimension measurement and the defect inspection is provided. The scanning electron microscope has a reference image storage unit for storing a reference image transcribing a reference pattern, an inspected image pick-up unit for picking up, on the basis of the reference image, an inspected image transcribing an inspection pattern which pattern-matches with the reference pattern, a critical dimension measuring unit for measuring critical dimensions of the inspection pattern by using the inspected image, and a defect inspection unit for performing an inspection of a defect inside or outside the inspection pattern by comparing the reference image with the inspected image.

    Abstract translation: 提供能够单独执行临界尺寸测量和缺陷检查的扫描电子显微镜。 该扫描电子显微镜具有参考图像存储单元，用于存储转录参考图案的参考图像，检测图像拾取单元，用于基于参考图像拾取图像匹配的检查图案的检查图像 使用参考图案，通过使用检查图像来测量检查图案的临界尺寸的临界尺寸测量单元和用于通过将参考图像与被检查图像进行比较来执行检查图案内部或外部的缺陷检查的缺陷检查单元 图片。

    Microstructured pattern inspection method
    35.
    发明授权
    Microstructured pattern inspection method 有权
    微结构图案检验方法

    公开(公告)号：US07791021B2

    公开(公告)日：2010-09-07

    申请号：US12208389

    申请日：2008-09-11

    Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    IPC: G01N23/00 ,  G21K7/00

    CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

    Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

    Abstract translation: 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

    Charged particle beam adjusting method and charged particle beam apparatus
    36.
    发明授权
    Charged particle beam adjusting method and charged particle beam apparatus 有权
    带电粒子束调节法和带电粒子束装置

    公开(公告)号：US07705300B2

    公开(公告)日：2010-04-27

    申请号：US11104631

    申请日：2005-04-13

    Applicant: Hidetoshi Morokuma ,  Noriaki Arai ,  Takashi Doi ,  Fumihiro Sasajima ,  Yoshihiro Kimura

    Inventor： Hidetoshi Morokuma ,  Noriaki Arai ,  Takashi Doi ,  Fumihiro Sasajima ,  Yoshihiro Kimura

    IPC: G01N23/00

    CPC classification number: H01J37/21 ,  H01J37/153 ,  H01J2237/216 ,  H01J2237/221

    Abstract: In an apparatus for obtaining an image by irradiating a charged particle beam on a specimen, a condition of the beam conditioned differently from vertical incidence as in the case of the beam being tilted is required to be adjusted. To this end, the apparatus has a controller for automatically controlling a stigmator, an objective lens and a deflector such that astigmatism is corrected, focus is adjusted and view filed shift is corrected. The controller has a selector for inhibiting at least one of the astigmatism correction, focus adjustment and FOV shift correction from being executed.

    Abstract translation: 在用于通过将带电粒子束照射在样本上来获得图像的装置中，需要调整如在光束倾斜的情况下不同于垂直入射而调节的光束的条件。 为此，该装置具有用于自动控制瞄光器，物镜和偏转器的控制器，从而校正像散，调整焦点并校正视野移动。 控制器具有用于禁止执行散光校正，聚焦调整和FOV偏移校正中的至少一个的选择器。

    Charged particle beam adjusting method and charged particle beam apparatus
    40.
    发明申请
    Charged particle beam adjusting method and charged particle beam apparatus 有权
    带电粒子束调节法和带电粒子束装置

    公开(公告)号：US20050236570A1

    公开(公告)日：2005-10-27

    申请号：US11104631

    申请日：2005-04-13

    Applicant: Hidetoshi Morokuma ,  Noriaki Arai ,  Takashi Doi ,  Fumihiro Sasajima ,  Yoshihiro Kimura

    Inventor： Hidetoshi Morokuma ,  Noriaki Arai ,  Takashi Doi ,  Fumihiro Sasajima ,  Yoshihiro Kimura

    IPC: G21K5/04 ,  G21K1/08 ,  G21K7/00 ,  H01J37/153

    CPC classification number: H01J37/21 ,  H01J37/153 ,  H01J2237/216 ,  H01J2237/221

    Abstract: In an apparatus for obtaining an image by irradiating a charged particle beam on a specimen, a condition of the beam conditioned differently from vertical incidence as in the case of the beam being tilted is required to be adjusted. To this end, the apparatus has a controller for automatically controlling a stigmator, an objective lens and a deflector such that astigmatism is corrected, focus is adjusted and view filed shift is corrected. The controller has a selector for inhibiting at least one of the astigmatism correction, focus adjustment and FOV shift correction from being executed.

    Abstract translation: 在用于通过将带电粒子束照射在样本上来获得图像的装置中，需要调整如在光束倾斜的情况下不同于垂直入射而调节的光束的条件。 为此，该装置具有用于自动控制瞄光器，物镜和偏转器的控制器，从而校正像散，调整焦点并校正视野移动。 控制器具有用于禁止执行散光校正，聚焦调整和FOV偏移校正中的至少一个的选择器。

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