公开(公告)号：US20240355577A1

公开(公告)日：2024-10-24

申请号：US18683071

申请日：2022-08-11

Applicant: ELDICO SCIENTIFIC AG

Inventor： Gunther STEINFELD ,  Harald NIEBEL ,  Christiaan VAN DEN BERG ,  Alexander VAN VEEN ,  Tomi TUOHIMAA

IPC: H01J37/21 ,  H01J37/14 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J37/295

CPC classification number: H01J37/21 ,  H01J37/14 ,  H01J37/1474 ,  H01J37/153 ,  H01J37/265 ,  H01J37/2955 ,  H01J2237/002 ,  H01J2237/0453 ,  H01J2237/1532

Abstract: A charged-particle beam device for charged-particle crystallography of a crystalline sample comprises a charged-particle source for generating a charged-particle beam to be radiated onto a sample and a charged-particle-optical system downstream the charged-particle source, which is configured to form in a diffraction mode a substantially parallel charged-particle beam at a predefined sample position and in an imaging mode a focused charged-particle beam having a focus at the predefined sample position. The charged-particle-optical system comprises a charged-particle zoom lens system consisting of a first magnetic lens, a second magnetic lens downstream the first magnetic lens and a third magnetic lens downstream the second magnetic lens, wherein at least the second magnetic lens, preferably each one of the first, the second and the third magnetic lens has a variable focal length. The charged-particle-optical system further comprises a single beam limiting aperture with a fixed aperture diameter arranged at a fixed position between the second magnetic lens and the third magnetic lens for limiting the diameter of the charged-particle beam at the sample position. The charged-particle-optical system is configured such that the diameter of the charged-particle beam at the sample position is in a range between 100 nanometer and 1000 nanometer, in particular between 220 nanometer and 250 nanometer, in the diffraction mode, and in a range between 10 nanometer and 200 nanometer in the imaging mode.

公开(公告)号：US12094684B1

公开(公告)日：2024-09-17

申请号：US16532459

申请日：2019-08-05

Applicant: Mochii, Inc.

Inventor： Christopher Su-Yan Own ,  Matthew Francis Murfitt

IPC: H01J37/28 ,  G01N23/2252 ,  H01J37/153 ,  H01J37/285

CPC classification number: H01J37/28 ,  G01N23/2252 ,  H01J37/153 ,  H01J37/285 ,  H01J2237/221 ,  H01J2237/2482 ,  H01J2237/2807

Abstract: A compact charged-particle-beam microscope, weighing less than about 50 kg and having a size of less than about 1 m×1 m×1 m, is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment, a stage to hold a sample in the vacuum chamber, a charged-particle beam source to generate a charged-particle beam, charged-particle beam optics to converge the charged-particle beam onto the sample, and one or more beam scanners to scan the charged-particle beam across the sample. A charged-particle detector is provided to detect charged-particle radiation emanating from the sample and generate a corresponding charged-particle-detection signal. At least one energy dispersive x-ray spectrometer (EDS) is provided to detect x-rays emanating from the sample and generate a corresponding x-ray-detection signal. A controller analyzes the charged-particle-detection signal and the x-ray-detection signal to generate an image of the sample and a histogram of x-ray energies for at least a portion of the sample.

公开(公告)号：US20240282547A1

公开(公告)日：2024-08-22

申请号：US18647061

申请日：2024-04-26

Applicant: NuFlare Technology, Inc.

Inventor： Koichi ISHII ,  Atsushi ANDO

IPC: H01J37/153 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J37/317

CPC classification number: H01J37/153 ,  H01J37/1474 ,  H01J37/244 ,  H01J37/3177 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/2448 ,  H01J2237/2817 ,  H01J2237/31776

Abstract: A multi-electron beam image acquisition apparatus includes a multiple primary electron beams forming device to form multiple primary electron beams, a first-deflector to scan the multiple-primary electron beams over a target object by deflecting the multiple-primary electron beams, a corrector to correct a beam-array-distribution-shape of multiple-secondary electron beams emitted from the target object irradiated with the multiple-primary electron beams, a second-deflector to deflect the multiple-secondary electron beams whose beam-array-distribution-shape has been corrected, a detector to detect the deflected multiple-secondary electron beams, and a deflection control circuit to control applying, to the second-deflector, a superimposed potential obtained by superimposing a deflection potential which cancels out a position movement of the multiple-secondary electron beams moved along with scanning the multiple-primary electron beams on a correction potential which corrects a distortion being generated due to correcting the beam-array-distribution-shape of the multiple-secondary electron beams and being dependent on a deflection amount for scanning.

公开(公告)号：US20240274396A1

公开(公告)日：2024-08-15

申请号：US18110284

申请日：2023-02-15

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： John Breuer ,  Dominik Patrick Ehberger ,  Kathrin Mohler ,  Ivo Liska

IPC: H01J37/147 ,  H01J37/09 ,  H01J37/153 ,  H01J37/28

CPC classification number: H01J37/1472 ,  H01J37/09 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/022 ,  H01J2237/1516 ,  H01J2237/1534 ,  H01J2237/24514

Abstract: A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.

公开(公告)号：US20240242924A1

公开(公告)日：2024-07-18

申请号：US18560013

申请日：2022-02-25

Applicant: V TECHNOLOGY CO., LTD.

Inventor： Michinobu MIZUMURA

IPC: H01J37/153 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/153 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28

Abstract: A condenser lens works to process an ion beam into a collimated form. An electrical aperture unit is disposed between the condenser lens and the objective lens. The electrical aperture unit works to alter an area through which the ion beam, as processed by the condenser lens, passes, thereby controlling a diameter of the ion beam. A plurality of beam shielding plate units are provided each of which includes a pair of beam shielding plates which are diametrically opposed to each other across the ion beam which has passed through the condenser lens. The beam shielding plates are movable in a direction perpendicular to an optical axis of the ion beam. The beam shielding plate units are arranged around the ion beam to define a diameter of the ion beam passing therethrough.

公开(公告)号：US20240242922A1

公开(公告)日：2024-07-18

申请号：US18493961

申请日：2023-10-25

Applicant: NuFlare Technology, Inc.

Inventor： Hirofumi MORITA ,  Haruyuki NOMURA

IPC: H01J37/153 ,  H01J37/04 ,  H01J37/09 ,  H01J37/145 ,  H01J37/317

CPC classification number: H01J37/153 ,  H01J37/045 ,  H01J37/09 ,  H01J37/145 ,  H01J37/3174 ,  H01J2237/04735 ,  H01J2237/31754 ,  H01J2237/31774

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the multi charged particle beam on a substrate, which has passed through the limiting aperture member, three or more correction lenses correcting an imaging state of the multi charged particle beam on the substrate, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied, the electric field control electrode generating an electric field between the substrate and the electric field control electrode. The two or more-stage objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the multi charged particle beam. The three or more correction lenses are placed upstream of a lens magnetic field of the second objective lens in the travel direction of the multi charged particle beam.

公开(公告)号：US20240242920A1

公开(公告)日：2024-07-18

申请号：US18482093

申请日：2023-10-06

Applicant: NuFlare Technology, Inc.

Inventor： Hirofumi MORITA

IPC: H01J37/145 ,  H01J37/153 ,  H01J37/21 ,  H01J37/317

CPC classification number: H01J37/145 ,  H01J37/153 ,  H01J37/21 ,  H01J37/3177 ,  H01J37/045

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes an acceleration lens comprised of an electrostatic lens including a plurality of electrodes and configured to accelerate a multi charged particle beam, two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the multi charged particle beam on a substrate, which has passed through a limiting aperture member, and three or more correction lenses including a first correction lens, a second correction lens and a third correction lens, and configured to correct an imaging state of the multi charged particle beam on the substrate. One or no electrostatic correction lens is placed in a magnetic field of each of the two or more-stage objective lenses. The first correction lens is an electrostatic correction lens that also serves as at least one of the plurality of electrodes of the acceleration lens.

公开(公告)号：US11961708B2

公开(公告)日：2024-04-16

申请号：US17236007

申请日：2021-04-21

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura ,  Noriaki Nakayamada

IPC: H01J37/00 ,  G03F7/00 ,  H01J37/12 ,  H01J37/147 ,  H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3174 ,  G03F7/70008 ,  G03F7/70558 ,  H01J37/12 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/3026 ,  H01L21/0274 ,  H01J2237/20228 ,  H01J2237/31761

Abstract: Position shifts caused by charging phenomena can be corrected with high accuracy. A charged particle beam writing apparatus includes an exposure-amount distribution calculator calculating an exposure amount distribution of a charged particle beam using a pattern density distribution and a dose distribution, a fogging charged particle amount distribution calculator calculating a plurality of fogging charged particle amount distributions by convoluting each of a plurality of distribution functions for fogging charged particles with the exposure amount distribution, a charge-amount distribution calculator calculating a charge amount distribution due to direct charge using the pattern density distribution, the dose distribution, and the exposure amount distribution, and calculating a plurality of charge amount distributions due to fogging charge using the plurality of fogging charged particle amount distributions, a position shift amount calculator calculating a position shift amount of a writing position based on the charge amount distribution due to direct charge and the plurality of charge amount distributions due to fogging charge, a corrector correcting an exposure position using the position shift amount, and a writer exposing the corrected exposure position to a charged particle beam.

公开(公告)号：US20240112884A1

公开(公告)日：2024-04-04

申请号：US17955252

申请日：2022-09-28

Applicant: KLA Corporation

Inventor： Michael I. Cook ,  Sameet K. Shriyan ,  David Dowling

IPC: H01J37/317 ,  H01J37/153 ,  H01J37/244

CPC classification number: H01J37/3177 ,  H01J37/153 ,  H01J37/244

Abstract: A system may include a controller couplable to an imaging sub-system utilizing multiple particle beams, where the imaging sub-system includes one or more control elements to manipulate the two or more particle beams that are adjustable with two or more control parameters. The controller may select values of the two or more control parameters by iteratively performing steps until one or more termination conditions are met. For example, the controller may receive measurements of changes of distortions of the particle beams resulting from individual adjustments of the control parameters. The controller may further calculate values of the control parameters that reduce the distortions of the particle beams based on the changes of the distortions resulting from the individual adjustments. The controller may further direct the adjustment of the values of the control parameters to the calculated values.

公开(公告)号：US20240096586A1

公开(公告)日：2024-03-21

申请号：US17829230

申请日：2022-05-31

Applicant: KLA CORPORATION

Inventor： Xinrong JIANG ,  Christopher SEARS ,  Youfei JIANG ,  Sameet K. SHRIYAN ,  Jeong Ho LEE ,  Michael STEIGERWALD ,  Ralph NYFFENEGGER

IPC: H01J37/153 ,  H01J37/06 ,  H01J37/12 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/153 ,  H01J37/06 ,  H01J37/12 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0451 ,  H01J2237/04735 ,  H01J2237/103 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/1532 ,  H01J2237/1536 ,  H01J2237/2448

Abstract: A multi-electron beam system that forms hundreds of beamlets can focus the beamlets, reduce Coulomb interaction effects, and improve resolutions of the beamlets. A Wien filter with electrostatic and magnetic deflection fields can separate the secondary electron beams from the 5 primary electron beams and can correct the astigmatism and source energy dispersion blurs for all the beamlets simultaneously.