利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

41 条记录 (耗时 0.014 秒)

    Hair remover
    33.
    外观设计
    Hair remover 失效
    脱毛机

    公开(公告)号：USD510138S1

    公开(公告)日：2005-09-27

    申请号：US29191275

    申请日：2003-10-03

    申请人： Hyunchul Kim

    设计人： Hyunchul Kim

    Display Device
    35.
    发明申请
    Display Device 有权
    显示设备

    公开(公告)号：US20130044417A1

    公开(公告)日：2013-02-21

    申请号：US13561221

    申请日：2012-07-30

    申请人： HyunChul KIM

    发明人： HyunChul KIM

    IPC分类号： H05K5/03

    CPC分类号： G02F1/133308 ,  G02F2001/133314 ,  G02F2001/13332 ,  G02F2201/465 ,  H05K5/02

    摘要： Disclosed is a display device which can prevent a rear cover from being damaged when a front cover is coupled to or decoupled from the rear cover. The display device includes a rear cover, a coupling member, and a front cover. The rear cover includes a receiving space for receiving a display panel. The coupling member is detachably coupled to the rear cover. The front cover is formed to surround a front border portion of the display panel, and detachably coupled to the coupling member.

    摘要翻译： 公开了一种显示装置，当前盖与后盖联接或从后盖分离时，可以防止后盖被损坏。 显示装置包括后盖，联接构件和前盖。 后盖包括用于接收显示面板的接收空间。 联接构件可拆卸地联接到后盖。 前盖形成为围绕显示面板的前边界部分，并且可拆卸地联接到联接构件。

    MICROELECTRONIC MEMORY DEVICES HAVING FLAT STOPPER LAYERS AND METHODS OF FABRICATING THE SAME
    37.
    发明申请
    MICROELECTRONIC MEMORY DEVICES HAVING FLAT STOPPER LAYERS AND METHODS OF FABRICATING THE SAME 有权
    具有平面止动层的微电子存储器件及其制造方法

    公开(公告)号：US20120037970A1

    公开(公告)日：2012-02-16

    申请号：US13117743

    申请日：2011-05-27

    申请人： Wonmo Park ,  Hyunchul Kim ,  Hyodong Ban ,  Hyunju Lee

    发明人： Wonmo Park ,  Hyunchul Kim ,  Hyodong Ban ,  Hyunju Lee

    IPC分类号： H01L29/772 ,  H01L21/02

    CPC分类号： H01L27/108 ,  H01L21/205 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

    摘要： Memory devices comprise a microelectronic substrate including a cell array region and a peripheral region adjacent the cell array region, the cell array region including therein an array of memory cells and the peripheral region including therein peripheral circuits for the array of memory cells, the microelectronic substrate including a lower layer that extends across the cell array region and across the peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, the insulating layer extending across the cell array region and the peripheral region and also including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Finally, an array of memory cell capacitor storage nodes is provided in the cell array region that extend beyond the flat stopper layer and that penetrate through the flat stopper layer and the insulating layer. Related methods are also provided.

    摘要翻译： 存储器件包括微电子衬底，其包括单元阵列区域和邻近单元阵列区域的外围区域，单元阵列区域包括存储单元阵列，外围区域包括存储单元阵列的外围电路，微电子衬底 包括延伸穿过电池阵列区域并跨过外围区域并且包括从电池阵列区域到外围区域的平坦外表面的下层。 信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸，并且在下层的平坦外表面上方的周边区域中延伸。 绝缘层设置在下层，绝缘层延伸穿过电池阵列区域和周边区域，并且还包括从电池阵列区域到外围区域的平坦的外表面。 在绝缘层的平坦外表面上设置有平坦的阻挡层，并延伸穿过电池阵列区域和周边区域。 最后，存储单元电容器存储节点阵列设置在单元阵列区域中，该阵列区域延伸超过平坦阻挡层并且穿过平坦阻挡层和绝缘层。 还提供了相关方法。